NVTFS5116PL Todos los transistores

NVTFS5116PL MOSFET Power, Single P-Channel -60 V, -14 A, 52 mW Features Small Footprint (3.3 x 3.3 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5116PLWF - Wettable Flanks Product 52 mW @ -10 V -60 V -14 A AEC-Q101 Qualified and PPAP Capable 72 mW

NVTFS5116PL Power MOSFET -60 V, -14 A, 52 mW, Single P-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com NV Prefix for Automotive and Other Applications Requiring AEC-Q101 Qualified Site and Change Controls V(BR)DSS RDS(on) MAX ID MAX These are Pb

NVTFS5124PL Power MOSFET -60 V, -6 A, 260 mW, Single P-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified These are Pb-Free Devices 260 mW @ -10 V -60 V -6 A MAXIMUM RATINGS (TJ = 25 C unless

MOSFET Power, Single N-Channel 40 V, 3.1 mW, 107 A NVTFS5C453NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVTFS5C453NLWF - Wettable Flanks Product 3.1 mW @ 10 V 40 V 107 A AEC-Q101 Qualified and PPAP Capable 5.2 mW

NVTFS5826NL Power MOSFET 60 V, 24 mW, 20 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com NV Prefix for Automotive and Other Applications Requiring AEC-Q101 Qualified Site and Change Controls V(BR)DSS RDS(on) MAX ID MAX These are Pb-F

NVTFS5C680NL MOSFET Power, Single N-Channel 60 V, 26.5 mW, 20 A Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5C680NLWF - Wettable Flanks Product 26.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 60 V 20 A The

NVTFS5C454NL Power MOSFET 40 V, 4.0 mW, 85 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C454NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

MOSFET Power, Single N-Channel 40 V, 9.0 mW, 41 A NVTFS5C471NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5C471NLWF - Wettable Flanks Product 9.0 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 40 V 41 A These

NVTFS5811NL MOSFET Power, Single N-Channel 40 V, 6.7 mW, 40 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5811NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 6.7 mW @ 10 V 40 V 40 A These

MOSFET Power, Single N-Channel 40 V, 4.8 mW, 74 A NVTFS5C460NL Features www.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5C460NLWF - Wettable Flanks Product 4.8 mW @ 10 V AEC-Q101 Qualified and PPAP Capable 40 V 74 A These

NVTFS5C466NL MOSFET - Power, Single N-Channel 40 V, 7.3 mW, 51 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C466NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 7.3 mW @ 10 V These Devices are

NVTFS5826NL Power MOSFET 60 V, 24 mW, 20 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5826NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 24 mW @ 10 V These Devices are Pb-F

NVTFS5811NL Power MOSFET 40 V, 6.7 mW, 40 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com NV Prefix for Automotive and Other Applications Requiring AEC-Q101 Qualified Site and Change Controls V(BR)DSS RDS(on) MAX ID MAX These are Pb-

NVTFS5C673NL Power MOSFET 60 V, 9.8 mW, 50 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C673NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

NVTFS5C670NL Power MOSFET 60 V, 6.8 mW, 70 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C670NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N-Channel, m8FL Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices* 11.5 mW @ 10 V 60 V 29 A MAXIMUM RATINGS (TJ = 25 C unless o

NVTFS5C658NL Power MOSFET 60 V, 5.0 mW, 109 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 5.0 mW @ 10 V These Devices are Pb

MOSFET Power, Single N-Channel 40 V, 14 mW, 26 A NVTFS5C478NL Features Small Footprint (3.3 x 3.3 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C478NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 14 mW @ 10 V These Devices are