NVTFS5826NL Todos los transistores

NVTFS5826NL Power MOSFET 60 V, 24 mW, 20 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5826NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 24 mW @ 10 V These Devices are Pb-F

NVTFS5826NL Power MOSFET 60 V, 24 mW, 20 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com NV Prefix for Automotive and Other Applications Requiring AEC-Q101 Qualified Site and Change Controls V(BR)DSS RDS(on) MAX ID MAX These are Pb-F

NVTFS5820NL Power MOSFET 60 V, 11.5 mW, Single N-Channel, m8FL Features Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices* 11.5 mW @ 10 V 60 V 29 A MAXIMUM RATINGS (TJ = 25 C unless o

NVTFS5811NL MOSFET Power, Single N-Channel 40 V, 6.7 mW, 40 A Features Small Footprint (3.3 x 3.3 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS5811NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 6.7 mW @ 10 V 40 V 40 A These

NVTFS5811NL Power MOSFET 40 V, 6.7 mW, 40 A, Single N-Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com NV Prefix for Automotive and Other Applications Requiring AEC-Q101 Qualified Site and Change Controls V(BR)DSS RDS(on) MAX ID MAX These are Pb-