SCH1430 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SCH1430
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.4 V
   Qgⓘ - Carga de la puerta: 1.8 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.093 Ohm
   Paquete / Cubierta: SCH6

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SCH1430 Datasheet (PDF)

..1. Size:409K sanyo
sch1430.pdf

SCH1430Ordering number : ENA1949SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1430ApplicationsFeatures 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) I

8.1. Size:351K sanyo
sch1439.pdf

SCH1439Ordering number : ENA1861SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1439ApplicationsFeatures ON-resistance RDS(on)1=55m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source

8.2. Size:339K sanyo
sch1436.pdf

SCH1436Ordering number : ENA1854SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1436ApplicationsFeatures ON-resistance RDS(on)1=135m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Sourc

8.3. Size:283K sanyo
sch1435.pdf

SCH1435Ordering number : ENA1637SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1435ApplicationsFeatures 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 12 VDrain Current (DC)

8.4. Size:342K sanyo
sch1434.pdf

SCH1434Ordering number : ENA1891SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1434ApplicationsFeatures 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) I

8.5. Size:282K sanyo
sch1433.pdf

SCH1433Ordering number : ENA1594SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1433ApplicationsFeatures 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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