SCH1434 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SCH1434
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.4 V
Qgⓘ - Carga de la puerta: 1.7 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Paquete / Cubierta: SCH6
Búsqueda de reemplazo de MOSFET SCH1434
SCH1434 Datasheet (PDF)
sch1434.pdf
SCH1434Ordering number : ENA1891SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1434ApplicationsFeatures 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) I
sch1439.pdf
SCH1439Ordering number : ENA1861SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1439ApplicationsFeatures ON-resistance RDS(on)1=55m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source
sch1436.pdf
SCH1436Ordering number : ENA1854SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1436ApplicationsFeatures ON-resistance RDS(on)1=135m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Sourc
sch1435.pdf
SCH1435Ordering number : ENA1637SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1435ApplicationsFeatures 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 12 VDrain Current (DC)
sch1430.pdf
SCH1430Ordering number : ENA1949SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1430ApplicationsFeatures 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) I
sch1433.pdf
SCH1433Ordering number : ENA1594SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1433ApplicationsFeatures 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)
Otros transistores... SCH1330 , SCH1331 , SCH1332 , SCH1334 , SCH1335 , SCH1337 , SCH1430 , SCH1433 , IRFB3206 , SCH1435 , SCH1436 , SCH1439 , SFT1341 , SFT1342 , SFT1350 , SFT1423 , SFT1431 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918