FDMS86368_F085 Todos los transistores

 

FDMS86368_F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS86368_F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 214 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 57 nC

Resistencia drenaje-fuente RDS(on): 0.009 Ohm

Empaquetado / Estuche: PQFN5X6

Búsqueda de reemplazo de MOSFET FDMS86368_F085

 

FDMS86368_F085 Datasheet (PDF)

1.1. fdms86368 f085.pdf Size:535K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

December 2014 FDMS86368_F085 N-Channel PowerTrench® MOSFET 80 V, 80 A, 4.5 mΩ Features Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For cu

2.1. fdms86369 f085.pdf Size:496K _upd-mosfet

FDMS86368_F085
FDMS86368_F085

March 2015 FDMS86369_F085 N-Channel PowerTrench® MOSFET 80 V, 65 A, 7.5 mΩ Features Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 65 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For current

 3.1. fdms86350et80.pdf Size:306K _upd-mosfet

FDMS86368_F085
FDMS86368_F085

January 2015 FDMS86350ET80 N-Channel PowerTrench® MOSFET 80 V, 198 A, 2.4 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175°C Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A been especially tailored to minimize the on-state resistance and yet maintain superior sw

3.2. fdms86300.pdf Size:267K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

August 2011 FDMS86300 N-Channel PowerTrench® MOSFET 80 V, 42 A, 3.9 mΩ Features General Description Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A ringing of DC/DC converters using either synchronous or Advanced Pac

 3.3. fdms86300dc.pdf Size:244K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

December 2014 FDMS86300DC N-Channel Dual CoolTM PowerTrench® MOSFET 80 V, 110 A, 3.1 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.0 mΩ a

3.4. fdms86350.pdf Size:272K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

November 2013 FDMS86350 N-Channel PowerTrench® MOSFET 80 V, 130 A, 2.4 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A been especially tailored to minimize the on-state resistance and Advanced

 3.5. fdms86310.pdf Size:309K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

October 2014 FDMS86310 N-Channel PowerTrench® MOSFET 80 V, 50 A, 4.8 mΩ Features General Description Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A ringing of DC/DC converters using either synchronous or Advanced Packa

3.6. fdms86320.pdf Size:338K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

October 2014 FDMS86320 N-Channel PowerTrench® MOSFET 80 V, 44 A, 11.7 mΩ Features General Description Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or Advanced P

3.7. fdms86322.pdf Size:216K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

October 2010 FDMS86322 N-Channel PowerTrench® MOSFET 80 V, 60 A, 7.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 A Semiconductor‘s advanced Power Trench® process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 A been especially tailored to minimize the on-state resistance and Advanced P

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
Back to Top

 


FDMS86368_F085
  FDMS86368_F085
  FDMS86368_F085
  FDMS86368_F085
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: RJL6013DPP | RJL6012DPP | RJL5014DPP | RJL5013DPP | RJL5012DPP | RJK6036DP3-A0 | RJK6032DPH-E0 | RJK6025DPH-E0 | RJK6024DP3-A0 | RJK6013DPP-E0 | RJK6002DPH-E0 | RJK6002DJE | RJK5032DPH-E0 | RJK5032DPD | RJK5014DPP-E0 |

 

 

 
Back to Top