FDMS86368_F085 Todos los transistores

 

FDMS86368_F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS86368_F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 214 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 57 nC

Resistencia drenaje-fuente RDS(on): 0.009 Ohm

Empaquetado / Estuche: PQFN5X6

Búsqueda de reemplazo de MOSFET FDMS86368_F085

 

FDMS86368_F085 Datasheet (PDF)

1.1. fdms86368 f085.pdf Size:535K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

December 2014 FDMS86368_F085 N-Channel PowerTrench® MOSFET 80 V, 80 A, 4.5 mΩ Features Typical RDS(on) = 3.7 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For cu

2.1. fdms86369 f085.pdf Size:496K _upd-mosfet

FDMS86368_F085
FDMS86368_F085

March 2015 FDMS86369_F085 N-Channel PowerTrench® MOSFET 80 V, 65 A, 7.5 mΩ Features Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 65 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For current

 3.1. fdms86350et80.pdf Size:306K _upd-mosfet

FDMS86368_F085
FDMS86368_F085

January 2015 FDMS86350ET80 N-Channel PowerTrench® MOSFET 80 V, 198 A, 2.4 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175°C Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A been especially tailored to minimize the on-state resistance and yet maintain superior sw

3.2. fdms86350.pdf Size:272K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

November 2013 FDMS86350 N-Channel PowerTrench® MOSFET 80 V, 130 A, 2.4 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A been especially tailored to minimize the on-state resistance and Advanced

 3.3. fdms86300dc.pdf Size:244K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

December 2014 FDMS86300DC N-Channel Dual CoolTM PowerTrench® MOSFET 80 V, 110 A, 3.1 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 3.1 mΩ at VGS = 10 V, ID = 24 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.0 mΩ a

3.4. fdms86322.pdf Size:216K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

October 2010 FDMS86322 N-Channel PowerTrench® MOSFET 80 V, 60 A, 7.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 A Semiconductor‘s advanced Power Trench® process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 A been especially tailored to minimize the on-state resistance and Advanced P

 3.5. fdms86310.pdf Size:309K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

October 2014 FDMS86310 N-Channel PowerTrench® MOSFET 80 V, 50 A, 4.8 mΩ Features General Description Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A ringing of DC/DC converters using either synchronous or Advanced Packa

3.6. fdms86320.pdf Size:338K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

October 2014 FDMS86320 N-Channel PowerTrench® MOSFET 80 V, 44 A, 11.7 mΩ Features General Description Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or Advanced P

3.7. fdms86300.pdf Size:267K _fairchild_semi

FDMS86368_F085
FDMS86368_F085

August 2011 FDMS86300 N-Channel PowerTrench® MOSFET 80 V, 42 A, 3.9 mΩ Features General Description Max rDS(on) = 3.9 mΩ at VGS = 10 V, ID = 19 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.5 mΩ at VGS = 8 V, ID = 15.5 A ringing of DC/DC converters using either synchronous or Advanced Pac

Otros transistores... FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , FMD40-06KC , STF5N52U , FMD47-06KC5 , FDBL86361_F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF , FMM50-025TF .

 

 
Back to Top

 


FDMS86368_F085
  FDMS86368_F085
  FDMS86368_F085
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |

 

 

 
Back to Top