GMM3x120-0075X2-SMD Todos los transistores

 

GMM3x120-0075X2-SMD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: GMM3x120-0075X2-SMD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 115 nC
   trⓘ - Tiempo de subida: 100 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm
   Paquete / Cubierta: ISOPLUSDIL

 Búsqueda de reemplazo de MOSFET GMM3x120-0075X2-SMD

 

GMM3x120-0075X2-SMD Datasheet (PDF)

 0.1. Size:171K  ixys
gmm3x120-0075x2-smd.pdf

GMM3x120-0075X2-SMD GMM3x120-0075X2-SMD

GMM 3x120-0075X2 VDSS = 75 VThree phase full BridgeID25 = 110 Awith Trench MOSFETsRDSon typ. = 4.0 mWin DCB isolated high current packageL1+ L2+ L3+G1 G3 G5S1 S3 S5L1 L2 L3G2 G4 G6S2 S4 S6L1- L2- L3-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 75 V - electric power steering VGS 20 V - star

 8.1. Size:169K  ixys
gmm3x100-01x1-smd.pdf

GMM3x120-0075X2-SMD GMM3x120-0075X2-SMD

GMM 3x100-01X1 VDSS = 100 VThree phase full BridgeID25 = 90 Awith Trench MOSFETsRDSon typ. = 7.5 mWin DCB isolated high current packageL1+ L2+ L3+G1 G3 G5S1 S3 S5L1 L2 L3G2 G4 G6S2 S4 S6L1- L2- L3-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 100 V - electric power steering VGS 20 V - start

 8.2. Size:263K  ixys
gmm3x180-004x2-smd.pdf

GMM3x120-0075X2-SMD GMM3x120-0075X2-SMD

GMM 3x180-004X2 VDSS = 40 VThree phase full BridgeID25 = 180 Awith Trench MOSFETsRDSon typ. = 1.9 mWin DCB isolated high current packageL1+ L2+ L3+Preliminary dataG1 G3 G5S1 S3 S5L1 L2 L3G2 G4 G6S2 S4 S6L1- L2- L3-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 40 V - electric power steering

 8.3. Size:172K  ixys
gmm3x160-0055x2-smd.pdf

GMM3x120-0075X2-SMD GMM3x120-0075X2-SMD

GMM 3x160-0055X2 VDSS = 55 VThree phase full BridgeID25 = 150 Awith Trench MOSFETsRDSon typ. = 2.2 mWin DCB isolated high current packageL1+ L2+ L3+G1 G3 G5S1 S3 S5L1 L2 L3G2 G4 G6S2 S4 S6L1- L2- L3-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 55 V - electric power steering VGS 20 V - star

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top

 


GMM3x120-0075X2-SMD
  GMM3x120-0075X2-SMD
  GMM3x120-0075X2-SMD
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F

 

 

 
Back to Top