FDMS3610S Todos los transistores

 

FDMS3610S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS3610S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.2 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 17.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 26 nC

Resistencia drenaje-fuente RDS(on): 0.005 Ohm

Empaquetado / Estuche: PQFN5X6

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FDMS3610S Datasheet (PDF)

1.1. fdms3610s.pdf Size:374K _fairchild_semi

FDMS3610S
FDMS3610S

December 2011 FDMS3610S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro

2.1. fdms36101l f085.pdf Size:421K _fairchild_semi

FDMS3610S
FDMS3610S

June 2013 FDMS36101L_F085 N-Channel Power Trench® MOSFET 100V, 38A, 26mΩ Features Typ rDS(on) = 18mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 70nC at VGS = 10V, ID = 20A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V Sy

 3.1. fdms3615s.pdf Size:560K _fairchild_semi

FDMS3610S
FDMS3610S

August 2011 FDMS3615S PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 16 A connected to enable easy placement and routing of synchronous Max rDS(on) = 8.3 mΩ at VGS =

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