FDMS3600AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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FDMS3600AS Datasheet (PDF)

..1. fdms3600as.pdf Size:565K _fairchild_semi

April 2011FDMS3600ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 m at VGS = 4.5

6.1. fdms3600s.pdf Size:384K _fairchild_semi

October 2010FDMS3600SDual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 m N-Channel: 25 V, 40 A, 1.6 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchron

6.2. fdms3600s.pdf Size:611K _onsemi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. fdms3606as.pdf Size:582K _fairchild_semi

April 2011FDMS3606ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V,

7.2. fdms3602as.pdf Size:557K _fairchild_semi

March 2011FDMS3602ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 m at VGS = 4.5

 7.3. fdms3602s.pdf Size:585K _fairchild_semi

March 2011FDMS3602SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.1 m at VGS = 4.5

7.4. fdms3606s.pdf Size:543K _fairchild_semi

December 2012FDMS3606SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5

 7.5. fdms3604s.pdf Size:602K _fairchild_semi

January 2015FDMS3604SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionThis device includes two specialized N-Channel MOSFETs in a Q1: N-Channeldual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V

7.6. fdms3604as.pdf Size:582K _fairchild_semi

March 2011FDMS3604ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V,

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