FDMS0302S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

 ..1. Size:468K  fairchild semi
 fdms0302s.pdf

October 2014FDMS0302SN-Channel PowerTrench SyncFETTM30 V, 49 A, 1.9 mFeatures General DescriptionThe FDMS0302S has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 23 Apackage technologies have been combined to offer the lowest

 7.1. Size:294K  fairchild semi
 fdms0308as.pdf

October 2014FDMS0308ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 2.8 mFeatures General DescriptionThe FDMS0308AS has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 Apackage technologies have been combined to offer the lowest rD

 7.2. Size:1403K  fairchild semi
 fdms030n06b.pdf

November 2013FDMS030N06BN-Channel PowerTrench MOSFET60 V, 100 A, 3 mFeatures Description RDS(on) = 2.4 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductors advance PowerTrench process that hasand High Efficiency been tailored to minimize the on-state resistance wh

 7.3. Size:288K  fairchild semi
 fdms0306as.pdf

January 2015FDMS0306ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 2.4 mFeatures General DescriptionThe FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 Apackage technologies have been combined to offer the lowest rD

 7.4. Size:195K  fairchild semi
 fdms0308cs.pdf

August 2010FDMS0308CSN-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General DescriptionThe FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest Advanc

 7.5. Size:309K  fairchild semi
 fdms0309as.pdf

January 2015FDMS0309ASN-Channel PowerTrench SyncFETTM30 V, 49 A, 3.5 mFeatures General DescriptionThe FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 m at VGS = 10 V, ID = 21 Apower conversion application. Advancements in both silicon and Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 Apackage technologies have been combined to offer the lowest rD

 7.6. Size:272K  fairchild semi
 fdms0300s.pdf

October 2014FDMS0300SN-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 mFeatures General DescriptionThe FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.0 m at VGS = 4.5 V, ID = 25 Apackage technologies have been combined to offer the lowest

 7.7. Size:402K  onsemi
 fdms0308as.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur