IXFA180N10T2 Todos los transistores

 

IXFA180N10T2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFA180N10T2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 480 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 66 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO263

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IXFA180N10T2 datasheet

 ..1. Size:208K  ixys
 ixfa180n10t2 ixfp180n10t2.pdf pdf_icon

IXFA180N10T2

Preliminary Technical Information TrenchT2TM HiperFETTM VDSS = 100V IXFA180N10T2 Power MOSFET ID25 = 180A IXFP180N10T2 RDS(on) 6m N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V TO-220AB (IXFP) VDGR TJ = 25 C to 175 C, RG

 ..2. Size:204K  inchange semiconductor
 ixfa180n10t2.pdf pdf_icon

IXFA180N10T2

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFA180N10T2 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAX

 8.1. Size:336K  ixys
 ixfa18n65x2 ixfp18n65x2 ixfh18n65x2.pdf pdf_icon

IXFA180N10T2

X2-Class HiPerFETTM VDSS = 650V IXFA18N65X2 Power MOSFET ID25 = 18A IXFP18N65X2 RDS(on) 200m IXFH18N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 VDSS TJ = 25 C to 150 C 650 V (IXFP) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGS

 8.2. Size:183K  ixys
 ixfa18n60x ixfh18n60x ixfp18n60x.pdf pdf_icon

IXFA180N10T2

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA18N60X Power MOSFET ID25 = 18A IXFP18N60X RDS(on) 230m IXFH18N60X TO-263 AA (IXFA) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to

MOSTRAR MÁS

Otros transistores... IXFA10N60P , IXFA10N80P , IXFA110N15T2 , IXFA12N50P , IXFA130N10T , IXFA130N10T2 , IXFA14N60P , IXFA16N50P , IRF1405 , IXFA230N075T2 , IXFA230N075T2-7 , IXFA3N120 , IXFA3N80 , IXFA4N100P , IXFA4N100Q , IXFA5N100P , IXFA6N120P .

History: NTJD4401N | STU417L

 

 

 

 

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