IXFA230N075T2-7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXFA230N075T2-7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 480 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Id|ⓘ - Corriente continua de drenaje: 230 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 59 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: TO263

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IXFA230N075T2-7 Datasheet (PDF)

9.1. Size:249K 1
ixfy26n30x3 ixfa26n30x3 ixfp26n30x3.pdf

Preliminary Technical InformationVDSS = 300VX3-Class HiPERFETTM IXFY26N30X3ID25 = 26APower MOSFETIXFA26N30X3 RDS(on) 66m IXFP26N30X3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)G SD (Tab)TO-263 (IXFA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGSVDGR TJ = 25C to 150C, RGS = 1

9.2. Size:288K ixys
ixfa20n85xhv ixfh20n85x ixfa20n85xhv ixfp20n85x ixfh20n85x.pdf

X-Class HiPerFETTM VDSS = 850VIXFA20N85XHVPower MOSFET ID25 = 20AIXFP20N85X RDS(on) 330m IXFH20N85XN-Channel Enhancement ModeTO-263HVAvalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 850 VVDGR TJ = 25C to 150C, RGS = 1M 850 VVGSS Continuo

9.3. Size:157K ixys
ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf

Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA20N50P3ID25 = 20APower MOSFETsIXFP20N50P3 RDS(on) 300m IXFQ20N50P3N-Channel Enhancement Mode IXFH20N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ

9.4. Size:179K ixys
ixfa22n60p3.pdf

Polar3TM HiperFETTM VDSS = 600VIXFA22N60P3ID25 = 22APower MOSFETsIXFP22N60P3 RDS(on) 360m IXFQ22N60P3N-Channel Enhancement Mode IXFH22N60P3TO-220AB (IXFP)Avalanche RatedFast Intrinsic RectifierTO-263 AA (IXFA)GD TabSGS TO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 150C 600 VSVDGR

9.5. Size:155K ixys
ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf

Advance Technical InformationPolar3TM HiperFETTM VDSS = 500VIXFA26N50P3ID25 = 26APower MOSFETsIXFP26N50P3 RDS(on) 230m IXFQ26N50P3N-Channel Enhancement Mode IXFH26N50P3Avalanche RatedTO-220AB (IXFP)Fast Intrinsic RectifierTO-263 AA (IXFA)GGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ

9.6. Size:155K ixys
ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFA24N60XPower MOSFET ID25 = 24AIXFP24N60X RDS(on) 175m IXFQ24N60XIXFH24N60XN-Channel Enhancement ModeTO-220AB (IXFP)Avalanche RatedTO-263 AA (IXFA)Fast Intrinsic DiodeGGDD (Tab)SSTO-3P (IXFQ)D (Tab)Symbol Test Conditions Maximum RatingsGVDSS TJ

9.7. Size:336K ixys
ixfa22n65x2 ixfp22n65x2 ixfh22n65x2.pdf

X2-Class HiPerFETTM VDSS = 650VIXFA22N65X2Power MOSFET ID25 = 22AIXFP22N65X2 RDS(on) 145m IXFH22N65X2N-Channel Enhancement ModeAvalanche RatedTO-263 (IXFA)GSSymbol Test Conditions Maximum Ratings D (Tab)TO-220 (IXFP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVGSM T

9.8. Size:168K ixys
ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf

Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFA22N65X2Power MOSFET ID25 = 22AIXFP22N65X2 RDS(on) 160m IXFH22N65X2N-Channel Enhancement ModeTO-263 AA (IXFA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXFP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to

9.9. Size:205K inchange semiconductor
ixfa22n65x2.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFA22N65X2 IIXFA22N65X2DESCRIPTIONDrain Current : I = 22A@ T =25D CDrain Source Voltage : V = 650V(Min)DSS100% Avalanche RatedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Switch-Mode and Resonant-Mode Power SuppliesDC-DC ConvertersAC and DC Moto

9.10. Size:203K inchange semiconductor
ixfa20n85xhv.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFA20N85XHVFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAX

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