IXFA3N80 Todos los transistores

 

IXFA3N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFA3N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 24 nC

Tiempo de elevación (tr): 250 nS

Resistencia drenaje-fuente RDS(on): 3.6 Ohm

Empaquetado / Estuche: TO263

Búsqueda de reemplazo de MOSFET IXFA3N80

 

IXFA3N80 Datasheet (PDF)

4.1. ixfa3n120 ixfp3n120.pdf Size:565K _ixys

IXFA3N80
IXFA3N80

IXFA 3N120 VDSS =1200 V HiPerFETTM IXFP 3N120 ID25 = 3 A Power MOSFETs ? RDS(on) = 4.5 ? ? ? ? ? ? trr ? 300 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V D (TAB) VGS Continuous 20 V G D VGSM Trans

5.1. ixfy36n20x3 ixfa36n20x3 ixfp36n20x3.pdf Size:310K _update-mosfet

IXFA3N80
IXFA3N80

VDSS = 200V X3-Class HiPERFETTM IXFY36N20X3 ID25 = 36A Power MOSFET IXFA36N20X3   RDS(on)    45m     IXFP36N20X3 N-Channel Enhancement Mode TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V G S VDGR TJ = 25C to 150C, RGS = 1M 200 V D (Tab) VGSS Continuous 20 V TO-220

5.2. ixfa34n65x2 ixfp34n65x2.pdf Size:205K _update-mosfet

IXFA3N80
IXFA3N80

X2-Class HiPerFETTM VDSS = 650V IXFA34N65X2 Power MOSFET ID25 = 34A IXFP34N65X2   RDS(on)    100m     IXFH34N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGS

 5.3. ixfa36n30p3 ixfp36n30p3.pdf Size:155K _ixys

IXFA3N80
IXFA3N80

Preliminary Technical Information Polar3 TM HiPerFETTM VDSS = 300V IXFA36N30P3 Power MOSFET ID25 = 36A IXFP36N30P3   RDS(on)    110m     N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263AA (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25C to 150C 300 V TO-220AB (IXFP) VDGR TJ = 25C to 150

5.4. ixfa30n60x ixfp30n60x.pdf Size:206K _ixys

IXFA3N80
IXFA3N80

Advance Technical Information X-Class HiPerFETTM VDSS = 600V IXFA30N60X Power MOSFET ID25 = 30A IXFP30N60X   RDS(on)    155m     N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M

 5.5. ixfa34n65x2.pdf Size:204K _inchange_semiconductor

IXFA3N80
IXFA3N80

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFA34N65X2 ·FEATURES ·With TO-263(D2PAK) packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain

Otros transistores... IXFA130N10T , IXFA130N10T2 , IXFA14N60P , IXFA16N50P , IXFA180N10T2 , IXFA230N075T2 , IXFA230N075T2-7 , IXFA3N120 , BUZ90A , IXFA4N100P , IXFA4N100Q , IXFA5N100P , IXFA6N120P , IXFA76N15T2 , IXFA7N100P , IXFA7N80P , IXFB100N50P .

 

 
Back to Top

 


IXFA3N80
  IXFA3N80
  IXFA3N80
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SWP069R10VS | SWD069R10VS | SWI069R10VS | NTHL082N65S3F | NSVJ3557SA3 | NP90N06VLG | NP90N055VUK | NP90N055VUG | NP90N055VDG | NP90N055PUH | NP90N055PDH | NP90N055NUK | NP90N055NUH | NP90N055NDH | NP90N055MUK |

 

 

 
Back to Top