2SK995 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK995
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 550 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 50 nS
Cossⓘ - Capacitancia de salida: 160 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
Encapsulados: TO3P
Búsqueda de reemplazo de 2SK995 MOSFET
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2SK995 datasheet
2sk995.pdf
Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request
2sk995.pdf
isc N-Channel MOSFET Transistor 2SK995 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =550V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE NIT V Drain-S
2sk992.pdf
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Otros transistores... 2SK987, 2SK988, 2SK989, 2SK990, 2SK991, 2SK992, 2SK993, 2SK994, IRLZ44N, 2SK996, 2SK997, 2SK998, 3N124, 3N125, 3N126, 3N140, 3N141
History: 2SK997
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