2SK997 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK997
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.01 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 1.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1000 Ohm
   Paquete / Cubierta: SST

Búsqueda de reemplazo de MOSFET 2SK997

2SK997 Datasheet (PDF)

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Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Request

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isc N-Channel MOSFET Transistor 2SK996DESCRIPTIONDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE NITV Drain-Source Voltage (V =0) 600

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isc N-Channel MOSFET Transistor 2SK995DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =550V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE NITV Drain-S

Otros transistores... 2SK989 , 2SK990 , 2SK991 , 2SK992 , 2SK993 , 2SK994 , 2SK995 , 2SK996 , IRF640N , 2SK998 , 3N124 , 3N125 , 3N126 , 3N140 , 3N141 , 3N159 , 3N163 .

Liste

Recientemente añadidas las descripciónes de los transistores: