IXFH120N20P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXFH120N20P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 714 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 152 nC
   trⓘ - Tiempo de subida: 200 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO247

Búsqueda de reemplazo de MOSFET IXFH120N20P

IXFH120N20P Datasheet (PDF)

5.1. Size:180K ixys
ixfh120n25t ixft120n25t.pdf

Preliminary Technical InformationTrenchTM HiperFETTM VDSS = 250VIXFT120N25TPower MOSFETs ID25 = 120AIXFH120N25T RDS(on) 23m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M 250 VTO-247

6.1. Size:177K ixys
ixfh120n15p ixft120n15p.pdf

IXFH 120N15P VDSS = 150 VPolarHTTM HiPerFETIXFT 120N15P ID25 = 120 APower MOSFET RDS(on) 16 m trr 200 nsN-Channel Enhancement Mode Avalanche Energy RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVDSS

8.1. Size:53K ixys
ixfh12n90q ixft12n90q.pdf

IXFH 12N90Q VDSS = 900 VHiPerFETTMIXFT 12N90Q ID25 = 12 APower MOSFETsRDS(on) = 0.9 WQ ClassN-Channel Enhancement Modetrr 200 nsAvalanche RatedLow Qg, High dv/dtPreliminary data sheetSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 VVGSM Transient 30 VID25 TC

8.2. Size:278K ixys
ixfp12n65x2m ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf

X2-Class HiPERFET VDSS = 650VIXFA12N65X2Power MOSFET ID25 = 12AIXFP12N65X2 RDS(on) 310m IXFH12N65X2N-Channel Enhancement ModeAvalanche RatedTO-263 (IXFA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXFP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVGSM Tr

8.3. Size:570K ixys
ixfh10n100 ixfm10n100 ixfh12n100 ixfm12n100.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N100 1000 V 10 A 1.20 Power MOSFETsIXFH/IXFM 12 N100 1000 V 12 A 1.05 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M

8.4. Size:179K ixys
ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETsIXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 1

8.5. Size:179K ixys
ixfh12n90p ixfv12n90p-s.pdf

Preliminary Technical InformationIXFH12N90P VDSS = 900VPolarTM Power MOSFETIXFV12N90P ID25 = 12AHiPerFETTM RDS(on) 900m IXFV12N90PS trr 300nsN-Channel Enhancement ModeAvalanche RatedPLUS220 (IXFV)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsDSVDSS TJ = 25C to 150C 900 VD (TAB)VDGR TJ

8.6. Size:144K ixys
ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT12N100Q 1000 V 12 A 1.05 Power MOSFETsIXFH/IXFT10N100Q 1000 V 10 A 1.20 Q Class trr 250 ns N-Channel Enhancement ModeAvalanche RatedLow Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS

8.7. Size:176K ixys
ixfh12n120p ixfv12n120p ixfv12n120ps.pdf

IXFH12N120P VDSS = 1200VPolarTM Power MOSFETIXFV12N120P ID25 = 12AHiPerFETTM RDS(on) 1.35 IXFV12N120PS N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic Diode PLUS220 (IXFV)GDSSymbol Test Conditions Maximum RatingsD (TAB)VDSS TJ = 25C to 150C 1200 VPLUS220SMD (IXFV_S)VDGR TJ = 25C to 1

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: