IXFH140N10P Todos los transistores

 

IXFH140N10P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFH140N10P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 600 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 140 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 155 nC

Tiempo de elevación (tr): 150 nS

Resistencia drenaje-fuente RDS(on): 0.011 Ohm

Empaquetado / Estuche: TO247

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IXFH140N10P Datasheet (PDF)

1.1. ixfh140n10p ixft140n10p.pdf Size:177K _ixys

IXFH140N10P
IXFH140N10P

IXFH 140N10P VDSS = 100 V PolarHVTM HiPerFET IXFT 140N10P ID25 = 140 A Power MOSFETs ? ? RDS(on) ? 11 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode trr ? 150 ns ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS Continuous 20 V VGSM Transient 30 V G D (

4.1. ixfa14n60p3 ixfh14n60p3.pdf Size:173K _ixys

IXFH140N10P
IXFH140N10P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA14N60P3 Power MOSFETs ID25 = 14A IXFP14N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 540mΩ ≤ Ω ≤ Ω IXFH14N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 15

4.2. ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf Size:116K _ixys

IXFH140N10P
IXFH140N10P

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W Power MOSFETs IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W trr ? 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet TO-247 AD Symbol Test Conditions Maximum Ratings (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 MW 1000 V (TAB) VGS Continuous 20 V VGS

 4.3. ixfh14n80 ixfh15n80.pdf Size:112K _ixys

IXFH140N10P
IXFH140N10P

HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode ? ? ? ? IXFH14N80 800 V 14 A 0.70 ? High dv/dt, Low trr, HDMOSTM Family ? ? ? ? IXFH15N80 800 V 15 A 0.60 ? ? trr ? ? 250 ns ? ? Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25

4.4. ixfa14n60p ixfh14n60p ixfp14n60p.pdf Size:257K _ixys

IXFH140N10P
IXFH140N10P

IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET ? ? IXFP 14N60P RDS(on) ? 550 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V S (TAB) VGS Continuous 30 V VGSM Tranisent 40 V TO-247 (I

Otros transistores... IXFH12N100P , IXFH12N120 , IXFH12N120P , IXFH12N50F , IXFH12N80P , IXFH12N90P , IXFH13N100 , IXFH13N90 , J113 , IXFH14N100Q2 , IXFH14N60P , IXFH14N80P , IXFH150N15P , IXFH150N17T , IXFH150N17T2 , IXFH15N100P , IXFH15N100Q .

 
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