IXFH150N17T2 Todos los transistores

 

IXFH150N17T2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFH150N17T2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 880 W

Tensión drenaje-fuente (Vds): 175 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 150 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 233 nC

Resistencia drenaje-fuente RDS(on): 0.012 Ohm

Empaquetado / Estuche: TO247

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IXFH150N17T2 Datasheet (PDF)

1.1. ixfh150n15p ixfk150n15p.pdf Size:252K _ixys

IXFH150N17T2
IXFH150N17T2

IXFH 150N15P PolarHTTM HiPerFET VDSS = 150 V IXFK 150N15P Power MOSFET ID25 = 150 A ? ? RDS(on)? 13 m? ? ? ? ? N-Channel Enhancement Mode ? ? Fast Intrinsic Diode ? trr ? 200 ns ? ? ? Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V VGS Continuous 20 V VGSM Transient 30 V G D

2.1. ixfh150n20t ixft150n20t.pdf Size:180K _ixys

IXFH150N17T2
IXFH150N17T2

Advance Technical Information TrenchTM HiperFETTM VDSS = 200V IXFT150N20T Power MOSFETs ID25 = 150A IXFH150N20T ≤ Ω RDS(on) ≤ Ω ≤ 15mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 200 V TO-247 (IX

 4.1. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Size:82K _ixys

IXFH150N17T2
IXFH150N17T2

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 15N60

4.2. ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf Size:116K _ixys

IXFH150N17T2
IXFH150N17T2

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W Power MOSFETs IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W trr ? 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet TO-247 AD Symbol Test Conditions Maximum Ratings (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 MW 1000 V (TAB) VGS Continuous 20 V VGS

 4.3. ixfh15n80q ixft15n80q.pdf Size:111K _ixys

IXFH150N17T2
IXFH150N17T2

IXFH 15N80Q VDSS = 800 V HiPerFETTM IXFT 15N80Q ID25 = 15 A Power MOSFETs RDS(on) = 0.60 W Q-Class trr ? 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 MW 800 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25C15 A IDM TC = 25C,

4.4. ixfh14n80 ixfh15n80.pdf Size:112K _ixys

IXFH150N17T2
IXFH150N17T2

HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) N-Channel Enhancement Mode ? ? ? ? IXFH14N80 800 V 14 A 0.70 ? High dv/dt, Low trr, HDMOSTM Family ? ? ? ? IXFH15N80 800 V 15 A 0.60 ? ? trr ? ? 250 ns ? ? Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25

Otros transistores... IXFH13N100 , IXFH13N90 , IXFH140N10P , IXFH14N100Q2 , IXFH14N60P , IXFH14N80P , IXFH150N15P , IXFH150N17T , 40673 , IXFH15N100P , IXFH15N100Q , IXFH15N100Q3 , IXFH15N80Q , IXFH160N15T , IXFH160N15T2 , IXFH16N120P , IXFH16N50P .

 
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