IXFH21N50F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFH21N50F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 250 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de IXFH21N50F MOSFET
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IXFH21N50F datasheet
9.1. Size:226K ixys
ixfp20n85x ixfh20n85x.pdf 
X-Class HiPerFETTM VDSS = 850V IXFP20N85X Power MOSFET ID25 = 20A IXFH20N85X RDS(on) 330m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25 C to 150 C 850 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 850 V TO-247 (IXFH) VGSS Continuous 30 V VGSM Transient 4
9.2. Size:288K ixys
ixfa20n85xhv ixfh20n85x ixfa20n85xhv ixfp20n85x ixfh20n85x.pdf
X-Class HiPerFETTM VDSS = 850V IXFA20N85XHV Power MOSFET ID25 = 20A IXFP20N85X RDS(on) 330m IXFH20N85X N-Channel Enhancement Mode TO-263HV Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 850 V VDGR TJ = 25 C to 150 C, RGS = 1M 850 V VGSS Continuo
9.3. Size:145K ixys
ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf
HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1
9.4. Size:157K ixys
ixfa20n50p3 ixfh20n50p3 ixfp20n50p3 ixfq20n50p3.pdf
Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA20N50P3 ID25 = 20A Power MOSFETs IXFP20N50P3 RDS(on) 300m IXFQ20N50P3 N-Channel Enhancement Mode IXFH20N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ
9.5. Size:122K ixys
ixft24n90p ixfh24n90p.pdf
Preliminary Technical Information VDSS = 900V IXFH24N90P PolarTM Power MOSFET ID25 = 24A IXFT24N90P HiPerFETTM RDS(on) 420m N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C, RGS = 1M
9.6. Size:197K ixys
ixfh26n60p ixft26n60p ixfv26n60p.pdf
IXFH26N60P VDSS = 600 V PolarHVTM IXFT26N60P ID25 = 26 A Power MOSFET IXFV26N60P RDS(on) 270 m N-Channel Enhancement Mode IXFV26N60PS trr 200 ns Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Contin
9.7. Size:295K ixys
ixfh22n60p ixfv22n60p.pdf
IXFH 22N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 22N60P ID25 = 22 A Power MOSFETs IXFV 22N60PS RDS(on) 350 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 60
9.8. Size:155K ixys
ixfa26n50p3 ixfh26n50p3 ixfp26n50p3 ixfq26n50p3.pdf
Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA26N50P3 ID25 = 26A Power MOSFETs IXFP26N50P3 RDS(on) 230m IXFQ26N50P3 N-Channel Enhancement Mode IXFH26N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ
9.9. Size:144K ixys
ixfh20n60q ixft20n60q.pdf
IXFH 20N60Q VDSS = 600 V HiPerFETTM IXFT 20N60Q ID25 = 20 A Power MOSFETs RDS(on) = 0.35 Q-Class trr 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS C
9.10. Size:155K ixys
ixfa24n60x ixfh24n60x ixfp24n60x ixfq24n60x.pdf
Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA24N60X Power MOSFET ID25 = 24A IXFP24N60X RDS(on) 175m IXFQ24N60X IXFH24N60X N-Channel Enhancement Mode TO-220AB (IXFP) Avalanche Rated TO-263 AA (IXFA) Fast Intrinsic Diode G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ
9.11. Size:82K ixys
ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 600 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 2
9.12. Size:165K ixys
ixfh230n10t.pdf
Preliminary Technical Information VDSS = 100V Trench HiperFETTM IXFH230N10T ID25 = 230A Power MOSFET RDS(on) 4.7m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V G VDGR TJ = 25 C to 175 C, RGS = 1M 100 V (TAB) D S VGSS Continuous 20 V
9.13. Size:149K ixys
ixfh20n80q ixfk20n80q ixft20n80q.pdf
IXFH20N80Q VDSS = 800 V HiPerFETTM IXFK20N80Q ID25 = 20 A Power MOSFETs IXFT20N80Q RDS(on) = 0.42 Q-Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, High dv/dt Preliminary Data TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800
9.14. Size:130K ixys
ixfq28n60p3 ixfh28n60p3.pdf
Advance Technical Information Polar3TM HiperFETTM VDSS = 600V IXFQ28N60P3 ID25 = 28A Power MOSFETs IXFH28N60P3 RDS(on) 260m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C, RGS = 1M 600 V TO-247 ( IX
9.15. Size:158K ixys
ixfh24n80p ixfk24n80p ixft24n80p.pdf
IXFH 24N80P VDSS = 800 V PolarHVTM HiPerFET IXFK 24N80P ID25 = 24 A Power MOSFET IXFT 24N80P RDS(on) 400 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Con
9.16. Size:336K ixys
ixfa22n65x2 ixfp22n65x2 ixfh22n65x2.pdf
X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2 RDS(on) 145m IXFH22N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) TO-220 (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGSM T
9.17. Size:326K ixys
ixfh20n80p ixft20n80p ixfv20n80p.pdf
IXFH 20N80P VDSS = 800 V PolarHVTM HiPerFET IXFT 20N80P ID25 = 20 A Power MOSFET IXFV 20N80P RDS(on) 520 m N-Channel Enhancement Mode IXFV 20N80PS trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RG
9.18. Size:107K ixys
ixfh26n60q ixft26n60q.pdf
IXFH 26N60Q VDSS = 600 V HiPerFETTM IXFT 26N60Q ID25 = 26 A Power MOSFETs RDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V (TAB) VGS Continuous 20 V
9.19. Size:323K ixys
ixfv26n50p ixfh26n50p.pdf
IXFH 26N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 26N50P ID25 = 26 A Power MOSFET IXFV 26N50PS RDS(on) 230 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-247 (IXFH)
9.20. Size:312K ixys
ixfh22n50p ixfv22n50p.pdf
IXFH 22N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 22N50P ID25 = 22 A Power MOSFET IXFV 22N50PS RDS(on) 270 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500
9.21. Size:69K ixys
ixfh22n55.pdf
HiPerFETTM IXFH 22 N55 VDSS = 550 V Power MOSFET ID (cont) = 22 A RDS(on) = 0.27 W N-Channel Enhancement Mode trr 250 ns Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 550 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 550 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C22 A IDM TC =
9.22. Size:168K ixys
ixfa22n65x2 ixfh22n65x2 ixfp22n65x2.pdf
Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2 RDS(on) 160m IXFH22N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to
9.23. Size:212K inchange semiconductor
ixfh20n85x.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFH20N85X FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
Otros transistores... IXFH16N80P
, IXFH16N90Q
, IXFH170N10P
, IXFH17N80Q
, IXFH18N60P
, IXFH18N90P
, IXFH20N100P
, IXFH20N80P
, 60N06
, IXFH21N50Q
, IXFH22N50P
, IXFH22N60P
, IXFH22N60P3
, IXFH230N075T2
, IXFH230N10T
, IXFH23N60Q
, IXFH23N80Q
.
History: BUK7K25-40E
| BUK762R9-40E
