IXFH30N40Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXFH30N40Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 298 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 95 nC
   trⓘ - Tiempo de subida: 250 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TO247

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IXFH30N40Q Datasheet (PDF)

7.1. Size:320K ixys
ixfh30n50p ixft30n50p ixfv30n50p.pdf

VDSS = 500 VIXFH 30N50PPolarHVTM HiPerFETID25 = 30 AIXFT 30N50PPower MOSFET RDS(on) 200 m IXFV 30N50PN-Channel Enhancement Modetrr 200 nsIXFV 30N50PSAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VD (TAB)VDGR TJ = 25 C to

7.2. Size:110K ixys
ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT 30N50500 V 30 A 0.16 WPower MOSFETsIXFH/IXFT 32N50500 V 32 A 0.15 WN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM Familytrr 250 nsTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 MW 500 VVGS Continuous 20 VVGSM Transient 30 VD (TAB)ID25 TC

7.3. Size:185K ixys
ixfh30n60x ixfq30n60x ixft30n60x.pdf

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT30N60XPower MOSFET ID25 = 30AIXFQ30N60X RDS(on) 155m IXFH30N60XTO-268 (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VGVDGR TJ = 25C to 150

7.4. Size:258K ixys
ixfh30n85x.pdf

Advance Technical InformationX-Class HiPerFETTM VDSS = 850VIXFT30N85XHVPower MOSFET ID25 = 30AIXFH30N85X RDS(on) 220m N-Channel Enhancement ModeAvalanche RatedTO-268HV (IXFT)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 850 V D (Tab)VDGR TJ = 25C to 150C, RGS = 1M 850 VTO-

7.5. Size:109K ixys
ixfh30n50q.pdf

7.6. Size:324K ixys
ixfh30n60p ixfv30n60p ixft30n60p.pdf

IXFH 30N60P VDSS = 600 VPolarHVTM HiPerFETIXFT 30N60P ID25 = 30 APower MOSFET IXFV 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXFV 30N60PS trr 200 nsFast Recovery DiodeAvalanche RatedPLUS220 (IXFV)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VGVDGR TJ = 25 C to 150 C; RGS

7.7. Size:212K inchange semiconductor
ixfh30n85x.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXFH30N85XFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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