IXFH30N60P Datasheet. Equivalente

 ..1. Size:324K  ixys
 ixfh30n60p ixfv30n60p ixft30n60p.pdf

IXFH 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFT 30N60P ID25 = 30 A Power MOSFET IXFV 30N60P RDS(on) 240 m N-Channel Enhancement Mode IXFV 30N60PS trr 200 ns Fast Recovery Diode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS

 5.1. Size:185K  ixys
 ixfh30n60x ixfq30n60x ixft30n60x.pdf

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT30N60X Power MOSFET ID25 = 30A IXFQ30N60X RDS(on) 155m IXFH30N60X TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150

 7.1. Size:320K  ixys
 ixfh30n50p ixft30n50p ixfv30n50p.pdf

VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET RDS(on) 200 m IXFV 30N50P N-Channel Enhancement Mode trr 200 ns IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to

 7.2. Size:110K  ixys
 ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC

 7.3. Size:258K  ixys
 ixfh30n85x.pdf

Advance Technical Information X-Class HiPerFETTM VDSS = 850V IXFT30N85XHV Power MOSFET ID25 = 30A IXFH30N85X RDS(on) 220m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 850 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 850 V TO-

 7.4. Size:109K  ixys
 ixfh30n50q.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC

 7.5. Size:212K  inchange semiconductor
 ixfh30n85x.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFH30N85X FEATURES With TO-247 packaging With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )