IXFH320N10T2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFH320N10T2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1000 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 320 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 98 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: TO247
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IXFH320N10T2 datasheet
..1. Size:186K ixys
ixfh320n10t2 ixft320n10t2.pdf 
Advance Technical Information TrenchT2TM HiperFETTM VDSS = 100V IXFH320N10T2 ID25 = 320A Power MOSFET IXFT320N10T2 RDS(on) 3.5m N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C, RGS = 1M 100 V TO-268
8.1. Size:110K ixys
ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC
8.2. Size:567K ixys
ixfh32n50q ixft32n50q.pdf
IXFH 32N50Q VDSS ID25 RDS(on) HiPerFETTM IXFT 32N50Q Power MOSFETs 500 V 32 A 0.16 500 V 32 A 0.16 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 50
9.1. Size:320K ixys
ixfh30n50p ixft30n50p ixfv30n50p.pdf
VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET RDS(on) 200 m IXFV 30N50P N-Channel Enhancement Mode trr 200 ns IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to
9.2. Size:182K ixys
ixfh340n075t2 ixft340n075t2.pdf
Advance Technical Information TrenchT2TM HiPerFETTM VDSS = 75V IXFH340N075T2 ID25 = 340A Power MOSFET IXFT340N075T2 RDS(on) 3.2m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings D D (TAB) S VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C, RGS = 1M 75 V VGSM Tra
9.3. Size:168K ixys
ixfh35n30 ixfh40n30 ixfm35n30 ixfm40n30.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 35 N30 300 V 35 A 100 mW Power MOSFETs IXFH 40 N30 300 V 40 A 85 mW IXFM 40 N30 300 V 40 A 88 mW N-Channel Enhancement Mode trr 200 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 300 V (TAB) VGS Continuous 20 V VGSM Trans
9.4. Size:268K ixys
ixfh36n60p ixft36n60p ixfk36n60p.pdf
IXFH 36N60P VDSS = 600 V PolarHVTM HiPerFET IXFK 36N60P ID25 = 36 A Power MOSFET IXFT 36N60P RDS(on) 190 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V
9.5. Size:185K ixys
ixfh30n60x ixfq30n60x ixft30n60x.pdf
Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT30N60X Power MOSFET ID25 = 30A IXFQ30N60X RDS(on) 155m IXFH30N60X TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150
9.6. Size:282K ixys
ixfp34n65x2 ixfh34n65x2.pdf
X2-Class HiPerFETTM VDSS = 650V IXFP34N65X2 Power MOSFET ID25 = 34A IXFH34N65X2 RDS(on) 100m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 650 V S D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V TO-247 VGSS Continuous 30 V (IXFH) VGSM Transien
9.7. Size:258K ixys
ixfh30n85x.pdf
Advance Technical Information X-Class HiPerFETTM VDSS = 850V IXFT30N85XHV Power MOSFET ID25 = 30A IXFH30N85X RDS(on) 220m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 850 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 850 V TO-
9.8. Size:129K ixys
ixfh34n50p3 ixfq34n50p3.pdf
Preliminary Technical Information Polar3TM HiperFETTM VDSS = 500V IXFQ34N50P3 ID25 = 34A Power MOSFETs IXFH34N50P3 RDS(on) 170m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P (IXFQ) G D Symbol Test Conditions Maximum Ratings S Tab VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V TO-247
9.9. Size:109K ixys
ixfh30n50q.pdf
VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC
9.10. Size:338K ixys
ixfh36n50p ixft36n50p ixfv36n50p.pdf
IXFH 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFT 36N50P ID25 = 36 A Power MOSFET IXFV 36N50P RDS(on) 170 m N-Channel Enhancement Mode IXFV 36N50PS trr 200 ms Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 500 V VDGR TJ = 25 C to 175 C; RGS
9.11. Size:205K ixys
ixfa34n65x2 ixfp34n65x2 ixfh34n65x2.pdf
X2-Class HiPerFETTM VDSS = 650V IXFA34N65X2 Power MOSFET ID25 = 34A IXFP34N65X2 RDS(on) 100m IXFH34N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGS
9.12. Size:324K ixys
ixfh30n60p ixfv30n60p ixft30n60p.pdf
IXFH 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFT 30N60P ID25 = 30 A Power MOSFET IXFV 30N60P RDS(on) 240 m N-Channel Enhancement Mode IXFV 30N60PS trr 200 ns Fast Recovery Diode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS
9.13. Size:212K inchange semiconductor
ixfh30n85x.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFH30N85X FEATURES With TO-247 packaging With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )
9.14. Size:212K inchange semiconductor
ixfh34n65x2.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFH34N65X2 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source
Otros transistores... IXFH28N50F
, IXFH28N50Q
, IXFH28N60P3
, IXFH30N40Q
, IXFH30N50P
, IXFH30N50Q3
, IXFH30N60P
, IXFH30N60Q
, 10N60
, IXFH340N075T2
, IXFH36N50P
, IXFH36N55Q
, IXFH36N55Q2
, IXFH36N60P
, IXFH400N075T2
, IXFH40N50Q
, IXFH40N50Q2
.
