IXFH400N075T2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFH400N075T2  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1000 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 400 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 77 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm

Encapsulados: TO247

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IXFH400N075T2 datasheet

 0.1. Size:188K  ixys
 ixfh400n075t2-ixft400n075t2.pdf pdf_icon

IXFH400N075T2

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 75V IXFH400N075T2 ID25 = 400A Power MOSFET IXFT400N075T2 RDS(on) 2.3m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C, RGS = 1M 75 V VGSS Con

 8.1. Size:265K  ixys
 ixft40n85xhv ixfh40n85x.pdf pdf_icon

IXFH400N075T2

Advance Technical Information X-Class HiPerFETTM VDSS = 850V IXFT40N85XHV Power MOSFET ID25 = 40A IXFH40N85X RDS(on) 145m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 850 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 850 V TO-

 8.2. Size:168K  ixys
 ixfh35n30 ixfh40n30 ixfm35n30 ixfm40n30.pdf pdf_icon

IXFH400N075T2

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 35 N30 300 V 35 A 100 mW Power MOSFETs IXFH 40 N30 300 V 40 A 85 mW IXFM 40 N30 300 V 40 A 88 mW N-Channel Enhancement Mode trr 200 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 300 V (TAB) VGS Continuous 20 V VGSM Trans

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 ixfh40n30q ixft40n30q.pdf pdf_icon

IXFH400N075T2

IXFH 40N30Q HiPerFETTM VDSS = 300 V IXFT 40N30Q Power MOSFETs ID25 = 40 A Q-Class RDS(on) = 80 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet TO-268 (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 300 V VGS Continuous 20 V G (TAB) VGSM Transie

MOSTRAR MÁS

Otros transistores... IXFH30N60P, IXFH30N60Q, IXFH320N10T2, IXFH340N075T2, IXFH36N50P, IXFH36N55Q, IXFH36N55Q2, IXFH36N60P, 7N65, IXFH40N50Q, IXFH40N50Q2, IXFH42N50P2, IXFH42N60P3, IXFH44N50P, IXFH50N30Q3, IXFH50N60P3, IXFH52N30P