IXFH52N50P2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Advance Technical InformationPolarP2TM HiperFETTM VDSS = 500VIXFH52N50P2ID25 = 52APower MOSFETIXFT52N50P2 RDS(on) 120m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXFH)Fast Intrinsic DiodeGDD (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-268 (IXFT)VDGR TJ = 25C to 150C, RGS = 1M 50

IXFH 52N30QHiPerFETTMVDSS = 300 VIXFK 52N30QPower MOSFETs ID25 = 52 AIXFT 52N30QQ-Class RDS(on) = 60 mWtrr 250 nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrLow Gate Charge and CapacitancesPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 MW 300 VVGS Continuo

VDSS ID25 RDS(on)HiPerFETTMPower MOSFETs 200 V 42 A 60mWIXFH/IXFM42N20200 V 50 A 45mWIXFH/IXFM/IXFT50N20200 V 58 A 40mWIXFH/IXFT58N20N-Channel Enhancement Modetrr 200 nsHigh dv/dt, Low trr, HDMOSTM FamilyTO-247 AD (IXFH)(TAB)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VVDGR TJ = 25C to 150C; RGS = 1 MW 200 V TO-268 (D3) Case StyleVG

Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 300VIXFA56N30X3Power MOSFET ID25 = 56AIXFP56N30X3 RDS(on) 27m IXFH56N30X3N-Channel Enhancement ModeTO-263 (IXFA)Avalanche RatedGSD (Tab)TO-220 (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300

IXFH 58N20QVDSS = 200 VHiPerFETTMIXFT 58N20QID25 = 58 APower MOSFETsRDS(on) = 40 mWQ-Classtrr 200 nsN-Channel Enhancement ModeAvalanche Rated High dv/dt, Low QgPreliminary data sheetTO-268 (D3) (IXFT) Case StyleSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 200 VVDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGS Continuous 20 VG(TAB)

X-Class HiPerFETTM VDSS = 850VIXFT50N85XHVPower MOSFET ID25 = 50AIXFH50N85X RDS(on) 105m IXFK50N85XTO-268HV (IXFT)N-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeS D (Tab)Symbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25C to 150C 850 VVDGR TJ = 25C to 150C, RGS = 1M 850 VVGSS Co

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT50N60XPower MOSFET ID25 = 50AIXFQ50N60X RDS(on) 73m IXFH50N60XN-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic DiodeGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 600 VDVDGR TJ = 25C to 1

Polar3TM HiperFETTM VDSS = 500VIXFT50N50P3ID25 = 50APower MOSFETIXFQ50N50P3 RDS(on) 125m IXFH50N50P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VGVDGR TJ = 25C to 150C, RGS = 1M 500 VD

isc N-Channel MOSFET Transistor IXFH56N30X3FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 300 VDSSV G