IXFH5N100P Datasheet. Equivalente

 9.1. Size:104K  ixys
 ixfh42n20 ixfm42n20 ixfh58n20 ixfm58n20 ixft50n20 ixfh50n20 ixfm50n20 ixft58n20.pdf

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs 200 V 42 A 60mW IXFH/IXFM42N20 200 V 50 A 45mW IXFH/IXFM/IXFT50N20 200 V 58 A 40mW IXFH/IXFT58N20 N-Channel Enhancement Mode trr 200 ns High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V TO-268 (D3) Case Style VG

 9.2. Size:313K  ixys
 ixfa56n30x3 ixfp56n30x3 ixfh56n30x3.pdf

Preliminary Technical Information X3-Class HiPerFETTM VDSS = 300V IXFA56N30X3 Power MOSFET ID25 = 56A IXFP56N30X3 RDS(on) 27m IXFH56N30X3 N-Channel Enhancement Mode TO-263 (IXFA) Avalanche Rated G S D (Tab) TO-220 (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C, RGS = 1M 300

 9.3. Size:70K  ixys
 ixfh52n30q ixfk52n30q ixft52n30q.pdf

IXFH 52N30Q HiPerFETTM VDSS = 300 V IXFK 52N30Q Power MOSFETs ID25 = 52 A IXFT 52N30Q Q-Class RDS(on) = 60 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 300 V VGS Continuo

 9.4. Size:355K  ixys
 ixfh58n20q ixft58n20q.pdf

IXFH 58N20Q VDSS = 200 V HiPerFETTM IXFT 58N20Q ID25 = 58 A Power MOSFETs RDS(on) = 40 mW Q-Class trr 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet TO-268 (D3) (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGS Continuous 20 V G (TAB)

 9.5. Size:294K  ixys
 ixft50n85xhv ixfh50n85x ixfk50n85x.pdf

X-Class HiPerFETTM VDSS = 850V IXFT50N85XHV Power MOSFET ID25 = 50A IXFH50N85X RDS(on) 105m IXFK50N85X TO-268HV (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 850 V VDGR TJ = 25 C to 150 C, RGS = 1M 850 V VGSS Co

 9.6. Size:127K  ixys
 ixft52n50p2 ixfh52n50p2.pdf

Advance Technical Information PolarP2TM HiperFETTM VDSS = 500V IXFH52N50P2 ID25 = 52A Power MOSFET IXFT52N50P2 RDS(on) 120m N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-268 (IXFT) VDGR TJ = 25 C to 150 C, RGS = 1M 50

 9.7. Size:184K  ixys
 ixfh50n60x ixfq50n60x ixft50n60x.pdf

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT50N60X Power MOSFET ID25 = 50A IXFQ50N60X RDS(on) 73m IXFH50N60X N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V D VDGR TJ = 25 C to 1

 9.8. Size:139K  ixys
 ixft50n50p3 ixfq50n50p3 ixfh50n50p3.pdf

Polar3TM HiperFETTM VDSS = 500V IXFT50N50P3 ID25 = 50A Power MOSFET IXFQ50N50P3 RDS(on) 125m IXFH50N50P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C, RGS = 1M 500 V D

 9.9. Size:222K  inchange semiconductor
 ixfh56n30x3.pdf

isc N-Channel MOSFET Transistor IXFH56N30X3 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 300 V DSS V G