IXFH60N20 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFH60N20  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 298 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 250 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: TO247

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IXFH60N20 datasheet

 6.1. Size:71K  ixys
 ixfh60n25q ixfk60n25q ixft60n25q.pdf pdf_icon

IXFH60N20

Advanced Technical Information IXFH 60N25Q HiPerFETTM VDSS = 250 V IXFK 60N25Q Power MOSFETs ID25 = 60 A IXFT 60N25Q Q-Class RDS(on) = 47 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 250

 7.1. Size:157K  ixys
 ixfh60n60x2a.pdf pdf_icon

IXFH60N20

X2-Class HiPerFETTM VDSS = 600V IXFH60N60X2A Power MOSFET ID25 = 60A RDS(on) 52m AEC Q101 Qualified N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 600 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 600 V S = Source Ta

 7.2. Size:113K  ixys
 ixfh60n65x2.pdf pdf_icon

IXFH60N20

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFH60N65X2 Power MOSFET ID25 = 60A RDS(on) 52m N-Channel Enhancement Mode Avalanche Rated TO-247 Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S =

 7.3. Size:166K  ixys
 ixfh60n60x ixfq60n60x.pdf pdf_icon

IXFH60N20

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFQ60N60X Power MOSFET ID25 = 60A IXFH60N60X RDS(on) 55m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXFQ) Fast Intrinsic Diode G D S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-247 (IXFH) VDGR TJ = 25 C to 150 C, RGS = 1

MOSTRAR MÁS

Otros transistores... IXFH42N50P2, IXFH42N60P3, IXFH44N50P, IXFH50N30Q3, IXFH50N60P3, IXFH52N30P, IXFH52N50P2, IXFH5N100P, BS170, IXFH60N20F, IXFH60N50P3, IXFH66N20Q, IXFH68N20, IXFH69N30P, IXFH6N100F, IXFH6N120, IXFH6N120P