IXFH74N20P Todos los transistores

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IXFH74N20P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFH74N20P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 480 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 5 V

Corriente continua de drenaje (Id): 74 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 200 nS

Resistencia drenaje-fuente RDS(on): 0.034 Ohm

Empaquetado / Estuche: TO247

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IXFH74N20P Datasheet (PDF)

5.1. ixfh76n06-11 ixfh76n07-11 ixfh76n06-12 ixfh76n07-12.pdf Size:80K _ixys

IXFH74N20P
IXFH74N20P

VDSS ID25 RDS(on) HiPerFETTM IXFH 76 N06-11 60 V 76 A 11 mW Power MOSFETs IXFH 76 N06-12 60 V 76 A 12 mW IXFH 76 N07-11 70 V 76 A 11 mW N-Channel Enhancement Mode IXFH 76 N07-12 70 V 76 A 12 mW High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 175C N06 60 V N07 70 V VDGR TJ = 25C to 175C; RGS = 10 kW N06 6

5.2. ixfh70n15 ixft70n15.pdf Size:52K _ixys

IXFH74N20P
IXFH74N20P

Advanced Technical Information IXFH 70N15 VDSS = 150 V HiPerFETTM IXFT 70N15 ID25 = 70 A Power MOSFETs RDS(on) = 28 mW trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 150 V VGS Continuous ±20 V VGSM Transient ±30 V (TAB) ID2

5.3. ixfh67n10 ixfh75n10 ixfm67n10 ixfm75n10.pdf Size:94K _ixys

IXFH74N20P
IXFH74N20P

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 67 N10 100 V 67 A 25 mW Power MOSFETs IXFH/IXFM 75 N10 100 V 75 A 20 mW trr ? 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 MW 100 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 67N10 67

5.4. ixfh75n10q ixft75n10q.pdf Size:151K _ixys

IXFH74N20P
IXFH74N20P

Advanced Technical Information IXFH 75N10Q VDSS = 100 V HiPerFETTM IXFT 75N10Q ID25 = 75 A Power MOSFETs RDS(on) = 20 mW Q-Class t £ 200ns rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous

5.5. ixfh7n80 ixfm7n80.pdf Size:76K _ixys

IXFH74N20P
IXFH74N20P

HiPerFETTM IXFH 7 N80 VDSS = 800 V Power MOSFETs IXFM 7 N80 ID (cont) = 7 A RDS(on) = 1.4 W N-Channel Enhancement Mode trr = 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C7 A TO-204 AA (IXFM

5.6. ixfh7n90q ixft7n90q.pdf Size:112K _ixys

IXFH74N20P
IXFH74N20P

www.DataSheet.co.kr Advanced Technical Information IXFH 7N90Q VDSS = 900 V HiPerFETTM IXFT 7N90Q ID25 = 7 A Power MOSFETs RDS(on) = 1.5 W Q-Class N-Channel Enhancement Mode trr £ 250 ns Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM

Otros transistores... IXFH66N20Q , IXFH68N20 , IXFH69N30P , IXFH6N100F , IXFH6N120 , IXFH6N120P , IXFH70N20Q3 , IXFH74N20 , J310 , IXFH7N90Q , IXFH80N08 , IXFH80N085 , IXFH80N10 , IXFH80N15Q , IXFH86N30T , IXFH88N20Q , IXFH88N30P .

 


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