IXFH96N15P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXFH96N15P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 480 W
   Voltaje máximo drenador - fuente |Vds|: 150 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 96 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 110 nC
   Tiempo de subida (tr): 200 nS
   Resistencia entre drenaje y fuente RDS(on): 0.024 Ohm
   Paquete / Cubierta: TO247

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IXFH96N15P Datasheet (PDF)

..1. Size:318K ixys
ixfh96n15p ixfv96n15p.pdf

IXFH 96N15P VDSS = 150 VPolarHTTM HiPerFETIXFV 96N15P ID25 = 96 APower MOSFET IXFV 96N15PS RDS(on) 24 m trr 200 nsN-Channel Enhancement ModeAvalanche Energy RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsGD(TAB)SVDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175

7.1. Size:225K ixys
ixfh96n20p ixft96n20p ixfv96n20p.pdf

IXFH 96N20PPolarHTTM HiPerFETVDSS = 200 VIXFT 96N20PID25 = 96 APower MOSFETIXFV 96N20P RDS(on) 24 m trr 200 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 200 VVDGR TJ = 25 C to 150 C; RGS = 1 M 200 V

9.1. Size:204K ixys
ixfh8n80 ixfh9n80.pdf

Preliminary Data SheetVDSS ID25 RDS(on) trrHiPerFETTMIXFH8N80 800V 8A 1.1 250 nsIXFH9N80 800V 9A 0.9 250 nsPower MOSFETsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilyTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transient 30 V TO-247 SMD*

9.2. Size:174K ixys
ixfh94n30t ixft94n30t.pdf

Preliminary Technical InformationTrenchTM HiperFETTM VDSS = 300VIXFT94N30TPower MOSFETs ID25 = 94AIXFH94N30T RDS(on) 36m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300 VTO-247 (I

9.3. Size:191K ixys
ixfp90n20x3 ixfq90n20x3 ixfh90n20x3.pdf

X3-Class HiPerFETTM VDSS = 200VIXFP90N20X3Power MOSFET ID25 = 90AIXFQ90N20X3 RDS(on) 12.8m IXFH90N20X3N-Channel Enhancement ModeAvalanche RatedTO-220AB (IXFP)GDD (Tab)STO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VGVDGR TJ = 25C to 150C, RGS = 1M 200 VDSVGSS Continuous

9.4. Size:145K ixys
ixfh94n30p3 ixfq94n30p3 ixft94n30p3.pdf

Advance Technical InformationPolar3TM HiperFETTM VDSS = 300VIXFT94N30P3ID25 = 94APower MOSFETsIXFQ94N30P3 RDS(on) 36m IXFH94N30P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VGVDGR TJ = 25C to 150C

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