IXFK20N120P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFK20N120P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 780 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 6.5 VQgⓘ - Carga de la puerta: 193 nC
trⓘ - Tiempo de subida: 300 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.57 Ohm
Paquete / Cubierta: TO264
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IXFK20N120P Datasheet (PDF)
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