IXFK30N110P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFK30N110P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 960 W
Voltaje máximo drenador - fuente |Vds|: 1100 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 6.5 V
Carga de la puerta (Qg): 235 nC
Tiempo de subida (tr): 300 nS
Resistencia entre drenaje y fuente RDS(on): 0.36 Ohm
Paquete / Cubierta: TO264
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IXFK30N110P Datasheet (PDF)
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