IXFK36N60P Todos los transistores

 ..1. Size:268K  ixys
 ixfh36n60p ixft36n60p ixfk36n60p.pdf

IXFH 36N60P VDSS = 600 V PolarHVTM HiPerFET IXFK 36N60P ID25 = 36 A Power MOSFET IXFT 36N60P RDS(on) 190 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V

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 ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf

IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 Preliminary Data VDSS ID25 RDS(on) trr IXFK/FN 36N60 600V 36A 0.18 250ns HiPerFETTM Power MOSFET IXFK/FN 32N60 600V 32A 0.25 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 600 600 V G VDGR TJ = 25 C to 150 C; RGS = 1

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 ixfk33n50 ixfk35n50.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFK33N50 500 V 33 A 0.16 W Power MOSFETs IXFK35N50 500 V 35 A 0.15 W N-Channel Enhancement Mode trr 250 ns Avalanche Rated, High dv/dt, Low trr Preliminary data TO-264 AA Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 500 V G VGS Continuous 20 V D (TAB) D S VGSM Transient 30 V ID

 9.2. Size:161K  ixys
 ixfk32n80p ixfx32n80p.pdf

IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET RDS(on) 270 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGSS Contin

 9.3. Size:123K  ixys
 ixfk30n50q ixfx30n50q.pdf

VDSS ID25 RDS(on) HiPerFETTM IXFK/IXFX 30N50Q 500 V 30 A 0.16 Power MOSFETs IXFK/IXFX 32N50Q 500 V 32 A 0.15 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS

 9.4. Size:573K  ixys
 ixfk32n50q ixfx32n50q.pdf

VDSS ID25 RDS(on) IXFK 32N50Q HiPerFETTM IXFX 32N50Q 500 V 32 A 0.16 Power MOSFETs 500 V 32 A 0.16 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M

 9.5. Size:124K  ixys
 ixfk32n90p ixfx32n90p.pdf

Advance Technical Information PolarTM HiPerFETTM VDSS = 900V IXFK32N90P Power MOSFETs ID25 = 32A IXFX32N90P RDS(on)

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 ixfk34n80 ixfx34n80.pdf

HiPerFETTM IXFK 34N80 VDSS = 800 V IXFX 34N80 ID25 = 34 A Power MOSFETs RDS(on) = 0.24 W Single MOSFET Die trr 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C34 A TO-264 AA (I