IXFK420N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXFK420N10T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1670 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 420 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 670 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: TO264

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IXFK420N10T Datasheet (PDF)

..1. Size:181K ixys
ixfk420n10t ixfx420n10t.pdf

Advance Technical InformationGigaMOSTM Trench VDSS = 100VIXFK420N10THiperFETTM ID25 = 420AIXFX420N10T RDS(on) 2.6m Power MOSFETtrr 140nsN-Channel Enhancement ModeAvalanche Rated TO-264 (IXFK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 100 V TABDSVDGR TJ = 25C

9.1. Size:162K ixys
ixfn44n50 ixfk44n50 ixfn48n50 ixfk48n50.pdf

VDSS ID25 RDS(on)HiPerFETTM IXFK / IXFN 44 N50 500 V 44 A 0.12 Power MOSFETsIXFK / IXFN 48 N50 500 V 48 A 0.10 trr 250 ns N-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AASymbol Test Conditions Maximum Ratings(IXFK)IXFK IXFNVDSS TJ = 25C to 150C 500 500 VVDGR TJ = 25C

9.2. Size:233K ixys
ixfk44n80p ixfx44n80p.pdf

PolarTMIXFK44N80P VDSS = 800VHiperFETTMID25 = 44AIXFX44N80PPower MOSFET RDS(on) 190m N-Channel Enhancement ModeTO-264 (IXFK)Avalanche RatedFast Intrinsic DiodeGDSSymbol Test Conditions Maximum RatingsTabVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C, RGS = 1M 800 VPLUS247 (IXFX)VGSS Continuous 30

9.3. Size:118K ixys
ixfk40n90p ixfx40n90p.pdf

Preliminary Technical InformationVDSS = 900VIXFK40N90PPolarTM Power MOSFETID25 = 40AIXFX40N90PHiPerFETTM RDS(on) 210m N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-264 (IXFK)VDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C, RGS = 1M

9.4. Size:296K ixys
ixfh44n50p ixfk44n50p ixft44n50p.pdf

IXFH 44N50P VDSS = 500 VPolarHVTM HiPerFETIXFK 44N50P ID25 = 44 APower MOSFETIXFT 44N50P RDS(on) 140 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 500 VVDGR TJ = 25 C to 175 C; RGS = 1 M 500

9.5. Size:104K ixys
ixfx44n60 ixfk44n60.pdf

HiPerFETTM IXFX 44N60 VDSS = 600 VIXFK 44N60 ID25 = 44 APower MOSFETsRDS(on) = 130 mWSingle MOSFET Dietrr 250 nsPLUS 247TM (IXFX)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 MW 600 V (TAB)GVGS Continuous 20 VDVGSM Transient 30 VID25 TC = 25C44 ATO-264 AA (IXFK)IDM TC = 25C, pulse width limite

9.6. Size:126K ixys
ixfx44n50f ixfk44n50f.pdf

HiPerRFTM VDSS = 500VIXFK44N50FID25 = 44APower MOSFETsIXFX44N50F RDS(on) 120m F-Class: MegaHertz Switchingtrr 250nsSingle MOSFET DieTO-264 (IXFK)N-Channel Enhancement ModeAvalanche Rated, Low Qg, Low Intrinsic RgHigh dV/dt, Low trrGDTabSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C

9.7. Size:108K ixys
ixfk44n50 ixfn44n50 ixfk48n50 ixfn48n50.pdf

9.8. Size:223K ixys
ixfk48n60p ixfx48n60p.pdf

IXFK 48N60P VDSS = 600 VPolarHVTM HiPerFETIXFX 48N60P ID2 = 48 APower MOSFET RDS(on) 135m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeTO-264 (IXFK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuou

9.9. Size:574K ixys
ixfk48n50q ixfx48n50q ixfk44n50q ixfx44n50q.pdf

VDSS ID25 RDS(on)HiPerFETTMIXFK/IXFX 48N50Q 500 V 48 A 100 mPower MOSFETsIXFK/IXFX 44N50Q 500 V 44 A 120 mQ-CLASS trr 250 ns Single MOSFET DieN-Channel Enhancement ModeAvalanche Rated, Low QgPLUS 247TM (IXFX)High dV/dt, Low trrSymbol Test Conditions Maximum Ratings (TAB)GDVDSS TJ = 25C to 150

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