IXFK80N60P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFK80N60P3 Datasheet (PDF)

6.1. Size:211K ixys
ixfh80n65x2 ixfk80n65x2.pdf pdf_icon

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ixfk72n20 ixfk80n20.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFK72N20 200 V 72 A 35 mW Power MOSFETs IXFK80N20 200 V 80 A 30 mW trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings TO-264 AA VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V G VGS Continuous 20 V (TAB) D S VGSM Transient 30 V ID25

7.2. Size:70K ixys
ixfh80n20q ixfk80n20q ixft80n20q.pdf pdf_icon

IXFH 80N20Q HiPerFETTM VDSS = 200 V IXFK 80N20Q Power MOSFETs ID25 = 80 A IXFT 80N20Q Q-Class RDS(on) = 28 mW trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V (TAB) VGS Continuous 20 V VGSM Transi

7.3. Size:230K ixys
ixfk80n50p ixfx80n50p.pdf pdf_icon

IXFK 80N50P VDSS = 500 V PolarHVTM HiPerFET IXFX 80N50P ID25 = 80 A Power MOSFET RDS(on) 65 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSM Transient

Otros transistores... IXFK64N60Q3 , IXFK66N50Q2 , IXFK73N30Q , IXFK74N50P2 , IXFK78N50P3 , IXFK80N15Q , IXFK80N50P , IXFK80N50Q3 , IRF4905 , IXFK88N20Q , IXFK88N30P , IXFK94N50P2 , IXFK98N50P3 , IXFL100N50P , IXFL30N120P , IXFL32N120P , IXFL34N100 .