IXFN140N20P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VDSS = 200 V IXFN 140N20P PolarHTTM HiPerFET ID25 = 115 A Power MOSFET RDS(on) 18 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 200 V miniBLOC, SOT-227 B (IXFN) VDGR TJ = 25 C to 175 C; RGS = 1 M 200 V E153432 VGS Continuous 20 V S

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Preliminary Technical Information PolarTM Power MOSFET VDSS = 300V IXFN170N30P ID25 = 138A HiPerFETTM RDS(on) 18m N-Channel Enhancement Mode trr 200ns Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 300 V S G VDGR TJ = 25 C to 150 C, R

HiPerFETTM IXFN 150N15 VDSS = 150 V ID25 = 150 A Power MOSFET RDS(on) = 12.5 mW Single MOSFET Die trr 250 ns Preliminary data sheet miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 150 V S VDGR TJ = 25 C to 150 C, RGS = 1MW 150 V G VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 150 A S IL(RMS) Terminal (curre

HiPerFETTM Power MOSFETs IXFN 100N10S1 VDSS = 100 V IXFN 100N10S2 with Schottky Diodes ID25 = 100 A IXFN 100N10S3 RDS(on) = 15 m m I=_ =C==_ = =pjmpI=mc =C=j = = S2 QEaF QEaF S1 S3 QEaF PEhF NEdF NEdF NEdF PE^F OEpF OEpF OIPEpF Symbol Test Conditions Maximum Rati

IXFN 120N20 VDSS = 200 V HiPerFETTM ID25 = 120 A Power MOSFETs RDS(on) = 17 m Single MOSFET Die N-Channel Enhancement Mode trr 250 ns Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 200 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V G VGS Co

VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25 C to 150 C 200 200 200 V G (TAB) VDGR TJ = 25 C t

VDSS = 150 V IXFN 180N15P PolarHTTM HiPerFET ID25 = 150 A Power MOSFET RDS(on) 11 m N-Channel Enhancement Mode Avalanche Rated trr 200 ns Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 175 C 150 V S VDGR TJ = 25 C to 175 C; RGS = 1 M 15

VDSS ID25 RDS(on) HiPerFETTM IXFK100N10 100 V 100 A 12 mW Power MOSFETs IXFN150N10 100 V 150 A 12 mW trr 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25 C to 150 C 100 100 V G (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 100 V D S VGS Continuous 20 20 V miniBLOC, SOT

Advanced Technical Information HiPerFETTM IXFN 100N25 VDSS = 250 V ID25 = 100 A Power MOSFETs Single MOSFET Die RDS(on) = 27 mW trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 250 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW 250 V G VGS Continuous 20 V

VDSS ID25 RDS(on) trr HiPerFETTM IXFN170N10 100V 170A 10mW 200ns Power MOSFET IXFK170N10 100V 170A 10mW 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 G D (TAB) VDSS TJ = 25 C to 150 C 100 100 V D S VDGR TJ = 25 C to 150 C 100 100 V VGS Continuous 20 20 V VGSM Transient 30 30 V miniBLOC, SO

IXFN 180N10 VDSS = 100 V HiPerFETTM ID25 = 180 A Power MOSFET RDS(on) = 8 m Single MOSFET Die trr 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 100 V S VDGR TJ = 25 C to 150 C, RGS = 1M 100 V G VGS Continuous 20 V VGSM Transient 30 V S ID

HiPerFETTM IXFN 130N30 VDSS = 300 V Power MOSFETs ID25 = 130 A Single Die MOSFET RDS(on) = 22 m D trr

Advance Technical Information GigaMOSTM VDSS = 300V IXFN160N30T ID25 = 130A Power MOSFET RDS(on) 19m trr 200ns N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 Fast Intrinsic Diode E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C, RGS = 1M

VDSS ID25 RDS(on) HiPerFETTM IXFN 200 N06 60 V 200 A 6 mW Power MOSFETs IXFN 180 N07 70 V 180 A 7 mW IXFN 200 N07 70 V 200 A 6 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr 250 ns Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C N07 70 V N06 60 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW N07 70 V G N06

IXFN 100N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 90 A Power MOSFET RDS(on) 49 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M 500

VDSS ID25 RDS(on) HiPerFETTM IXFK 90 N 20 200 V 90 A 23 mW Power MOSFETs IXFN 100 N 20 200 V 100 A 23 mW IXFN 106 N 20 200 V 106 A 20 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated, High dv/dt, Low trr TO-264 AA Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN IXFN 90N20 100N20 106N20 VDSS TJ = 25 C to 150 C 200 200 200 V G (TAB) VDGR TJ = 25 C t

HiPerFETTM IXFN 180N20 VDSS = 200 V Power MOSFETs ID25 = 180 A Single Die MOSFET RDS(on) = 10 mW D trr