IXFN27N80Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Not for New Designs VDSS ID25 RDS(on) IXFK 27N80 800 V 27 A 0.30 HiPerFETTM Power MOSFETs IXFK 25N80 800 V 25 A 0.35 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 27N80 800 V 27 A 0.30 IXFN 25N80 800 V 25 A 0.35 TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs N-Channel Enhancement Mode IXFK 27N80 800 V 27 A 0.30 W Avalanche Rated, High dv/dt, Low trr IXFK 25N80 800 V 25 A 0.35 W IXFN 27N80 800 V 27 A 0.30 W IXFN 25N80 800 V 25 A 0.35 W Symbol Test Conditions Maximum Ratings TO-264 AA (IXFK) IXFK IXFN VDSS TJ = 25 C to 150 C 800 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 800 V VGS Continuo

Advanced Technical Information HiPerFETTM IXFN 230N10 VDSS = 100 V Power MOSFETs ID25 = 230 A Single Die MOSFET RDS(on) = 6 mW D trr

VDSS ID (cont) RDS(on) trr HiPerFETTM Power MOSFETs 900 V 26 A 0.30 W 250 ns IXFN 26N90 Single Die MOSFET IXFN 25N90 900 V 25 A 0.33 W 250 ns N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 900 V S VDGR TJ = 25 C to 150 C; RGS =

HiPerFETTM Power VDSS = 1000V IXFN24N100 MOSFET ID25 = 24A RDS(on) 390m N-Channel Enhancement Mode trr 250ns Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 1000 V S G VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V V

VDSS ID25 RDS(on) HiPerFETTM IXFN 200 N06 60 V 200 A 6 m Power MOSFETs IXFN 200 N07 70 V 200 A 6 m N-Channel Enhancement Mode trr 250 ns Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C N07 70 V VDGR TJ = 25 C to 150 C; RGS

VDSS ID25 RDS(on) HiPerFETTM IXFN 200 N06 60 V 200 A 6 mW Power MOSFETs IXFN 180 N07 70 V 180 A 7 mW IXFN 200 N07 70 V 200 A 6 mW N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr 250 ns Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C N07 70 V N06 60 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW N07 70 V G N06

VDSS = 100 V IXFN 200N10P PolarTM HiPerFET ID25 = 200 A Power MOSFET RDS(on) 7.5 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated miniBLOC, SOT-227 B (IXFN) Symbol Test Conditions Maximum Ratings E153432 S VDSS TJ = 25 C to 175 C 100 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS C

Advance Technical Information GigaMOSTM VDSS = 170V IXFN260N17T ID25 = 245A Power MOSFET RDS(on) 6.5m trr 200ns N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Fast Intrinsic Diode S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 170 V VDGR TJ = 25 C to 175 C, RGS = 1M 170

HiPerFETTM VDSS = 70V IXFN280N07 ID25 = 280A Power MOSFETs RDS(on) 5m Single Die MOSFET trr 250ns N-Channel Enhancement Mode Avalanche Rated High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 70 V VDGR TJ = 25 C to 150 C, RGS = 1M 70 V VGSS