IXFN360N10T Todos los transistores

 

IXFN360N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXFN360N10T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 830 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 360 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: SOT227
     - Selección de transistores por parámetros

 

IXFN360N10T Datasheet (PDF)

 8.1. Size:192K  ixys
ixfk32n60 ixfn32n60 ixfk36n60 ixfn36n60.pdf pdf_icon

IXFN360N10T

IXFK 32N60 IXFN 32N60IXFK 36N60 IXFN 36N60Preliminary DataVDSS ID25 RDS(on) trrIXFK/FN 36N60 600V 36A 0.18 250nsHiPerFETTM Power MOSFETIXFK/FN 32N60 600V 32A 0.25 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrTO-264 AA (IXFK)Symbol Test Conditions Maximum RatingsIXFK IXFNVDSS TJ = 25C to 150C 600 600 VGVDGR TJ = 25C to 150C; RGS = 1

 8.2. Size:128K  ixys
ixfn36n100.pdf pdf_icon

IXFN360N10T

HiPerFETTMIXFN 36N100 V = 1000VDSSPower MOSFETsID25 = 36ASingle Die MOSFET RDS(on) = 0.24DN-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)E153432VDSS TJ = 25C to 150C 1000 VSVDGR TJ = 25C to 150C; RGS = 1 M 1000 VGVGS Continuous 20 VVGSM

 9.1. Size:128K  ixys
ixfn39n90.pdf pdf_icon

IXFN360N10T

VDSS = 900 VIXFN 39N90HiPerFETTMID25 = 39 APower MOSFETsRDS(on) = 0.22 Single MOSFET DieD trr 250 ns N-Channel Enhancement ModeGAvalanche Rated, High dv/dt, Low trrSSSymbol Test Conditions Maximum RatingsminiBLOC, SOT-227 B (IXFN)VDSS TJ = 25C to 150C 900 VE153432VDGR TJ = 25C to 150C; RGS = 1 M 900

 9.2. Size:128K  ixys
ixfn34n80.pdf pdf_icon

IXFN360N10T

HiPerFETTM Power MOSFETsIXFN 34N80 VDSS = 800 VSingle DieMOSFETID25 = 34 ARDS(on) = 0.24 WN-Channel Enhancement Mode DAvalanche Rated, High dv/dt, Low trrtrr 250 nsPreliminary data sheetSSymbol Test Conditions Maximum Ratings miniBLOC, SOT-227 BE153432VDSS TJ = 25C to 150C 800 VSVDGR TJ = 25C to 150C; RGS = 1 MW 800 VGVGS Continuous 20 VVGSM Transi

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