IXFN360N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFN360N10T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 830 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 360 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Paquete / Cubierta: SOT227
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IXFN360N10T Datasheet (PDF)
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Otros transistores... IXFN320N17T2 , IXFN32N100P , IXFN32N100Q3 , IXFN32N120 , IXFN32N120P , IXFN32N80P , IXFN340N06 , IXFN34N100 , 5N50 , IXFN360N15T2 , IXFN36N110P , IXFN38N100P , IXFN38N100Q2 , IXFN38N80Q2 , IXFN40N110P , IXFN40N90P , IXFN420N10T .
History: RFP12N10 | RJK6013DPE
History: RFP12N10 | RJK6013DPE



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