IXFN38N100Q2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFN38N100Q2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 890 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 300 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
Paquete / Cubierta: SOT227B
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IXFN38N100Q2 Datasheet (PDF)
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Otros transistores... IXFN32N120P , IXFN32N80P , IXFN340N06 , IXFN34N100 , IXFN360N10T , IXFN360N15T2 , IXFN36N110P , IXFN38N100P , IRF3205 , IXFN38N80Q2 , IXFN40N110P , IXFN40N90P , IXFN420N10T , IXFN44N100P , IXFN44N100Q3 , IXFN44N50Q , IXFN44N80P .
History: IRFSL4310 | SSM6P15FU | SWN7N65K2 | IXTK120N25P | STD100N03LT4 | HGP059N08A | STW75N60M6
History: IRFSL4310 | SSM6P15FU | SWN7N65K2 | IXTK120N25P | STD100N03LT4 | HGP059N08A | STW75N60M6



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