IXFN62N80Q3 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFN62N80Q3 datasheet

9.1. Size:148K ixys
ixfn64n60p.pdf pdf_icon

VDSS = 600 V IXFN 64N60P PolarHVTM HiPerFET ID25 = 50 A Power MOSFET RDS(on) 96 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S

9.2. Size:145K ixys
ixfn60n80p.pdf pdf_icon

IXFN 60N80P VDSS = 800 V PolarHVTM HiPerFET ID25 = 53 A Power MOSFET RDS(on) 140 m trr 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 800 V S G VDGR TJ = 25 C to 150 C; RGS = 1 M

9.3. Size:71K ixys
ixfn60n60.pdf pdf_icon

9.4. Size:144K ixys
ixfn64n50p.pdf pdf_icon

IXFN 64N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 61 A Power MOSFET RDS(on) 85 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V G

Otros transistores... IXFN48N50U2 , IXFN48N55 , IXFN48N60P , IXFN50N80Q2 , IXFN520N075T2 , IXFN52N90P , IXFN56N90P , IXFN60N80P , AON6414A , IXFN64N50P , IXFN64N50PD2 , IXFN64N50PD3 , IXFN64N60P , IXFN66N50Q2 , IXFN70N60Q2 , IXFN72N55Q2 , IXFN73N30Q .