IXFP10N60P Todos los transistores

 

IXFP10N60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXFP10N60P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 200 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.74 Ohm
   Paquete / Cubierta: TO220

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IXFP10N60P Datasheet (PDF)

 9.1. Size:252K  ixys
 ixfa16n50p ixfh16n50p ixfp16n50p.pdf pdf_icon

IXFP10N60P

IXFA 16N50P VDSS = 500 V PolarHVTM HiPerFET IXFH 16N50P ID25 = 16 A Power MOSFET IXFP 16N50P RDS(on) 400 m trr 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V

 9.2. Size:278K  ixys
 ixfp12n65x2m ixfp12n65x2 ixfa12n65x2 ixfh12n65x2.pdf pdf_icon

IXFP10N60P

X2-Class HiPERFET VDSS = 650V IXFA12N65X2 Power MOSFET ID25 = 12A IXFP12N65X2 RDS(on) 310m IXFH12N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Tr

 9.3. Size:166K  ixys
 ixfa16n60p3 ixfh16n60p3 ixfp16n60p3.pdf pdf_icon

IXFP10N60P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA16N60P3 Power MOSFETs ID25 = 16A IXFP16N60P3 RDS(on) 440m IXFH16N60P3 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 15

 9.4. Size:257K  ixys
 ixfa14n60p ixfh14n60p ixfp14n60p.pdf pdf_icon

IXFP10N60P

IXFA 14N60P VDSS = 600 V PolarHVTM HiPerFET IXFH 14N60P ID25 = 14 A Power MOSFET IXFP 14N60P RDS(on) 550 m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V S (TAB) VGS Continuous 30 V V

MOSTRAR MÁS

Otros transistores... IXFN80N50P , IXFN80N50Q2 , IXFN80N50Q3 , IXFN80N60P3 , IXFN82N60P , IXFN82N60Q3 , IXFP05N100M , IXFP102N15T , IRFP260 , IXFP10N80P , IXFP110N15T2 , IXFP12N50P , IXFP12N50PM , IXFP130N10T , IXFP130N10T2 , IXFP14N60P , IXFP16N50P .

History: SI5424DC | P8008HVA | DE475-102N20A | P8008HV

 

 
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