IXFP230N075T2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Preliminary Technical Information VDSS = 300V X3-Class HiPERFETTM IXFY26N30X3 ID25 = 26A Power MOSFET IXFA26N30X3 RDS(on) 66m IXFP26N30X3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) G S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G S VDGR TJ = 25 C to 150 C, RGS = 1

X-Class HiPerFETTM VDSS = 850V IXFP20N85X Power MOSFET ID25 = 20A IXFH20N85X RDS(on) 330m N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25 C to 150 C 850 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 850 V TO-247 (IXFH) VGSS Continuous 30 V VGSM Transient 4

X-Class HiPerFETTM VDSS = 850V IXFA20N85XHV Power MOSFET ID25 = 20A IXFP20N85X RDS(on) 330m IXFH20N85X N-Channel Enhancement Mode TO-263HV Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 850 V VDGR TJ = 25 C to 150 C, RGS = 1M 850 V VGSS Continuo

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA20N50P3 ID25 = 20A Power MOSFETs IXFP20N50P3 RDS(on) 300m IXFQ20N50P3 N-Channel Enhancement Mode IXFH20N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

Preliminary Technical Information X2-Class HiperFETTM VDSS = 650V IXFP22N65X2M Power MOSFET ID25 = 22A RDS(on) 145m (Electrically Isolated Tab) OVERMOLDED N-Channel Enhancement Mode TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G Isolated Tab D VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Conti

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFA26N50P3 ID25 = 26A Power MOSFETs IXFP26N50P3 RDS(on) 230m IXFQ26N50P3 N-Channel Enhancement Mode IXFH26N50P3 Avalanche Rated TO-220AB (IXFP) Fast Intrinsic Rectifier TO-263 AA (IXFA) G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA24N60X Power MOSFET ID25 = 24A IXFP24N60X RDS(on) 175m IXFQ24N60X IXFH24N60X N-Channel Enhancement Mode TO-220AB (IXFP) Avalanche Rated TO-263 AA (IXFA) Fast Intrinsic Diode G G D D (Tab) S S TO-3P (IXFQ) D (Tab) Symbol Test Conditions Maximum Ratings G VDSS TJ

X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2 RDS(on) 145m IXFH22N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) TO-220 (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGSM T

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFA22N65X2 Power MOSFET ID25 = 22A IXFP22N65X2 RDS(on) 160m IXFH22N65X2 N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXFP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to

Advance Technical Information Polar3TM HiperFETTM VDSS = 500V IXFP20N50P3M Power MOSFET ID25 = 8A RDS(on) 300m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continuous 30 V G D S VGSM Tran

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP22N65X2M FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP24N65X FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gat

isc N-Channel MOSFET Transistor IXFP20N85X FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFP22N65X2 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Ga