IXFP7N100P Todos los transistores

 

IXFP7N100P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFP7N100P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 1000 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 6 V

Carga de compuerta (Qg): 47 nC

Tiempo de elevación (tr): 300 nS

Resistencia drenaje-fuente RDS(on): 1.9 Ohm

Empaquetado / Estuche: TO220

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IXFP7N100P Datasheet (PDF)

4.1. ixfa7n60p3 ixfp7n60p3.pdf Size:159K _ixys

IXFP7N100P
IXFP7N100P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA7N60P3 Power MOSFETs ID25 = 7A IXFP7N60P3 ≤ Ω RDS(on) ≤ Ω ≤ 1.15Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25°C to 150°C 600 V D (Tab) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V TO-220AB

5.1. ixfa76n15t2 ixfp76n15t2.pdf Size:180K _ixys

IXFP7N100P
IXFP7N100P

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 150V IXFA76N15T2 ID25 = 76A Power MOSFET IXFP76N15T2 ? ? RDS(on) ? ? ? 20m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXFA) Fast Intrnsic Rectifier G S Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25C to 175C 150 V TO-220AB (IXFP) VDGR TJ = 25C to 175C, RGS = 1M? 150 V VGSS Continuous

5.2. ixfp72n20x3m.pdf Size:254K _inchange_semiconductor

IXFP7N100P
IXFP7N100P

isc N-Channel MOSFET Transistor IXFP72N20X3M ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBO

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