IXFP7N100P Todos los transistores

 

IXFP7N100P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXFP7N100P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 300 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
   Paquete / Cubierta: TO220
 

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IXFP7N100P datasheet

 8.1. Size:159K  ixys
 ixfa7n60p3 ixfp7n60p3.pdf pdf_icon

IXFP7N100P

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA7N60P3 Power MOSFETs ID25 = 7A IXFP7N60P3 RDS(on) 1.15 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 600 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 600 V TO-220AB

 9.1. Size:184K  ixys
 ixfp72n20x3m.pdf pdf_icon

IXFP7N100P

Preliminary Technical Information X3-Class HiPerFETTM VDSS = 200V IXFP72N20X3M Power MOSFET ID25 = 72A RDS(on) 20m (Electrically Isolated Tab) OVERMOLDED TO-220 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings G Isolated Tab D S VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C, RGS = 1M 200 V G = Gate D

 9.2. Size:180K  ixys
 ixfa76n15t2 ixfp76n15t2.pdf pdf_icon

IXFP7N100P

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 150V IXFA76N15T2 ID25 = 76A Power MOSFET IXFP76N15T2 RDS(on) 20m N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXFA) Fast Intrnsic Rectifier G S Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25 C to 175 C 150 V TO-220AB (IXFP) VDGR TJ = 25 C to 175 C, RGS = 1M

 9.3. Size:254K  inchange semiconductor
 ixfp72n20x3m.pdf pdf_icon

IXFP7N100P

isc N-Channel MOSFET Transistor IXFP72N20X3M FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

MOSTRAR MÁS

Otros transistores... IXFP4N100P , IXFP4N100PM , IXFP4N100Q , IXFP4N100QM , IXFP5N100P , IXFP5N50PM , IXFP6N120P , IXFP76N15T2 , IRF1407 , IXFP7N80P , IXFP7N80PM , IXFP8N50PM , IXFQ10N80P , IXFQ12N80P , IXFQ14N80P , IXFQ22N60P3 , IXFQ24N50P2 .

 

 
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