IXFR150N15 Todos los transistores

 

IXFR150N15 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFR150N15

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 417 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 105 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 360 nC

Tiempo de elevación (tr): 250 nS

Resistencia drenaje-fuente RDS(on): 0.0125 Ohm

Empaquetado / Estuche: ISOPLUS247

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IXFR150N15 Datasheet (PDF)

4.1. ixfr15n80q.pdf Size:32K _ixys

IXFR150N15
IXFR150N15

HiPerFETTM Power MOSFETs IXFR 15N80Q VDSS = 800 V ISOPLUS247TM Q Class ID25 = 13 A RDS(on) = 0.60 W (Electrically Isolated Back Surface) N-Channel Enhancement Mode trr £ 250 ns Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V

5.1. ixfr180n15p.pdf Size:152K _ixys

IXFR150N15
IXFR150N15

IXFR 180N15P VDSS = 150 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET ? ? RDS(on) ? 13 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 175 C 150 V E153432 VDGR TJ = 25 C to 175 C; RGS = 1 M? 150

5.2. ixfr102n30p.pdf Size:151K _ixys

IXFR150N15
IXFR150N15

VDSS = 300 V IXFR 102N30P PolarHTTM HiPerFET ID25 = 60 A Power MOSFET ? ? RDS(on) ? 36 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) ? trr ? ? 200 ns ? ? N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 150 C 300 V E153432 VDGR TJ = 25 C to 150 C; RGS = 1 M? 300 V VGS Continu

 5.3. ixfr180n085.pdf Size:57K _ixys

IXFR150N15
IXFR150N15

HiPerFETTM Power MOSFETs IXFR 180N085 VDSS = 85 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 7 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25°C to 150°C85 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 85 V VGS Continuous ±20 V VGSM Transient ±30 V G D ID25 TC = 25°C

5.4. ixfr120n20.pdf Size:74K _ixys

IXFR150N15
IXFR150N15

IXFR 120N20 VDSS = 200 V HiPerFETTM Power MOSFETs ID25 = 105 A ISOPLUS247TM ? RDS(on) = 17 m? ? ? ? (Electrically Isolated Back Surface) ? trr ? ? 250 ns ? ? Single MOSFET Die Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C; RGS = 1 M? 200 V G VGS Continuous 20 V D VGSM Transient

 5.5. ixfr10n100q ixfr12n100q.pdf Size:33K _ixys

IXFR150N15
IXFR150N15

Advanced Technical Information VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs IXFR 12N100Q 1000 V 10 A 1.05 W ISOPLUS247TM Q CLASS IXFR 10N100Q 1000 V 9 A 1.20 W (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25°C to 150°C 1000 V

5.6. ixfr140n20p.pdf Size:139K _ixys

IXFR150N15
IXFR150N15

VDSS = 200 V IXFR 140N20P PolarHTTM HiPerFET ID25 = 90 A Power MOSFET ? ? RDS(on) ? 22 m? ? ? ? ? ? ? ISOPLUS247TM ? trr ? ? 200 ns ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) VDSS TJ = 25 C to 175 C 200 V E153432 VDGR TJ = 25 C to 175 C; RGS = 1 M? 20

5.7. ixfr180n10.pdf Size:33K _ixys

IXFR150N15
IXFR150N15

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 V ISOPLUS247TM ID25 = 165 A (Electrically Isolated Back Surface) RDS(on)= 8 mW trr ? 250 ns Single MOSFET Die Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C; RGS = 1 MW 100 V VGS Continuous 20 V G VGSM Transient 30 V D Isolated back surface* ID25 TC = 25C

5.8. ixfr10n100f ixfr12n100f.pdf Size:97K _ixys

IXFR150N15
IXFR150N15

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs Ω IXFR 12N100F 1000 V 10 A 1.05 Ω Ω Ω Ω ISOPLUS247TM Ω IXFR 10N100F 1000 V 9 A 1.20 Ω Ω Ω Ω F-Class: MegaHertz Switching ≤ trr ≤ ≤ 250 ns ≤ ≤ (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol

5.9. ixfr180n07.pdf Size:32K _ixys

IXFR150N15
IXFR150N15

HiPerFETTM Power MOSFETs IXFR 180N07 VDSS = 70 V ISOPLUS247TM ID25 = 180 A (Electrically Isolated Back Surface) RDS(on)= 6 mW trr £ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VDSS TJ = 25°C to 150°C70 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 70 V G VGS Continuous ±20 V D VGSM Transient ±30 V Isolated back surface* ID

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