IXFR80N50P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFR80N50P Datasheet (PDF)

..1. Size:149K ixys
ixfr80n50p.pdf pdf_icon

PolarHVTM HiPerFET IXFR 80N50P VDSS = 500 V Power MOSFET ID25 = 45 A ISOPLUS247TM RDS(on) 72 m trr 200 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V ISOPLUS247 (IXFR) VDGR TJ = 25 C to

7.1. Size:37K ixys
ixfr80n10q.pdf pdf_icon

HiPerFETTM Power MOSFETs IXFR 80N10Q VDSS = 100 V ISOPLUS247TM, Q-Class ID25 = 76 A (Electrically Isolated Back Surface) RDS(on) = 15 mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 100 V VGS Cont

7.2. Size:34K ixys
ixfr80n20q.pdf pdf_icon

HiPerFETTM Power MOSFETs IXFR 80N20Q VDSS = 200 V ISOPLUS247TM, Q-Class ID25 = 71 A (Electrically Isolated Back Surface) RDS(on) = 28mW N-Channel Enhancement Mode trr 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V VGS Continuous

Otros transistores... IXFR4N100Q , IXFR64N50P , IXFR64N50Q3 , IXFR64N60P , IXFR64N60Q3 , IXFR66N50Q2 , IXFR70N15 , IXFR80N15Q , P55NF06 , IXFR80N50Q3 , IXFR80N60P3 , IXFR90N30 , IXFT120N15P , IXFT12N100F , IXFT12N50F , IXFT12N90Q , IXFT13N100 .