IXFT12N50F Todos los transistores

 

IXFT12N50F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFT12N50F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 180 W

Tensión drenaje-fuente (Vds): 500 V

Corriente continua de drenaje (Id): 12 A

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 250 nS

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TO247

Búsqueda de reemplazo de MOSFET IXFT12N50F

 

IXFT12N50F Datasheet (PDF)

3.1. ixft12n100qhv.pdf Size:148K _ixys

IXFT12N50F
IXFT12N50F

Advance Technical Information High Voltage HiPerFETTM VDSS = 1000V IXFT12N100QHV Power MOSFET ID25 = 12A ≤ Ω ≤ Ω Q-CLASS RDS(on) ≤ 1.05Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-268S G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25°C to 150°C 1000 V D (Tab) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V G = Ga

3.2. ixft10n100 ixft12n100.pdf Size:556K _ixys

IXFT12N50F
IXFT12N50F

VDSS ID25 RDS(on) HiPerFETTM ? IXFT 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFT12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ? trr ? ? 250 ns ? ? Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 Case Style VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G (TAB) VGS

 3.3. ixfh12n90q ixft12n90q.pdf Size:53K _ixys

IXFT12N50F
IXFT12N50F

IXFH 12N90Q VDSS = 900 V HiPerFETTM IXFT 12N90Q ID25 = 12 A Power MOSFETs RDS(on) = 0.9 W Q Class N-Channel Enhancement Mode trr £ 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC

3.4. ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf Size:144K _ixys

IXFT12N50F
IXFT12N50F

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFT12N100Q 1000 V 12 A 1.05 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFT10N100Q 1000 V 10 A 1.20 Ω Ω Ω Ω Q Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS

Otros transistores... IXFR70N15 , IXFR80N15Q , IXFR80N50P , IXFR80N50Q3 , IXFR80N60P3 , IXFR90N30 , IXFT120N15P , IXFT12N100F , IRF2807 , IXFT12N90Q , IXFT13N100 , IXFT140N10P , IXFT14N80P , IXFT150N17T2 , IXFT15N100Q , IXFT15N100Q3 , IXFT16N120P .

 
Back to Top

 


IXFT12N50F
  IXFT12N50F
  IXFT12N50F
  IXFT12N50F
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top