IXFT150N17T2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFT150N17T2  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 880 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 175 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO268

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IXFT150N17T2 datasheet

 ..1. Size:182K  ixys
 ixfh150n17t2 ixft150n17t2.pdf pdf_icon

IXFT150N17T2

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 175V IXFH150N17T2 ID25 = 150A Power MOSFET IXFT150N17T2 RDS(on) 12.0m trr 160ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 175 V G VDGR TJ = 25 C to 175 C, RG

 6.1. Size:180K  ixys
 ixfh150n20t ixft150n20t.pdf pdf_icon

IXFT150N17T2

Advance Technical Information TrenchTM HiperFETTM VDSS = 200V IXFT150N20T Power MOSFETs ID25 = 150A IXFH150N20T RDS(on) 15m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C, RGS = 1M 200 V TO-247 (IX

 8.1. Size:111K  ixys
 ixfh15n80q ixft15n80q.pdf pdf_icon

IXFT150N17T2

IXFH 15N80Q VDSS = 800 V HiPerFETTM IXFT 15N80Q ID25 = 15 A Power MOSFETs RDS(on) = 0.60 W Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25 C15 A IDM

 8.2. Size:116K  ixys
 ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf pdf_icon

IXFT150N17T2

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W Power MOSFETs IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W trr 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet TO-247 AD Symbol Test Conditions Maximum Ratings (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 1000 V (TAB) VGS Continuous

MOSTRAR MÁS

Otros transistores... IXFR90N30, IXFT120N15P, IXFT12N100F, IXFT12N50F, IXFT12N90Q, IXFT13N100, IXFT140N10P, IXFT14N80P, IRF4905, IXFT15N100Q, IXFT15N100Q3, IXFT16N120P, IXFT16N80P, IXFT16N90Q, IXFT18N90P, IXFT20N100P, IXFT20N80P