IXFT16N80P Todos los transistores

 

IXFT16N80P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFT16N80P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 460 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 70 nC

Tiempo de elevación (tr): 250 nS

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: TO268

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IXFT16N80P Datasheet (PDF)

5.1. ixfh18n100q3 ixft18n100q3.pdf Size:130K _ixys

IXFT16N80P
IXFT16N80P

Advance Technical Information HiperFETTM VDSS = 1000V IXFT18N100Q3 Power MOSFETs ID25 = 18A IXFH18N100Q3 ≤ Ω Q3-Class RDS(on) ≤ Ω ≤ 660mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V TO-247 (IXFH) VDGR TJ = 25°C to 150°C, RGS = 1M

5.2. ixfh140n10p ixft140n10p.pdf Size:177K _ixys

IXFT16N80P
IXFT16N80P

IXFH 140N10P VDSS = 100 V PolarHVTM HiPerFET IXFT 140N10P ID25 = 140 A Power MOSFETs ? ? RDS(on) ? 11 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode trr ? 150 ns ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 100 V VGS Continuous 20 V VGSM Transient 30 V G D (

 5.3. ixft12n100qhv.pdf Size:148K _ixys

IXFT16N80P
IXFT16N80P

Advance Technical Information High Voltage HiPerFETTM VDSS = 1000V IXFT12N100QHV Power MOSFET ID25 = 12A ≤ Ω ≤ Ω Q-CLASS RDS(on) ≤ 1.05Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-268S G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25°C to 150°C 1000 V D (Tab) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V G = Ga

5.4. ixft10n100 ixft12n100.pdf Size:556K _ixys

IXFT16N80P
IXFT16N80P

VDSS ID25 RDS(on) HiPerFETTM ? IXFT 10 N100 1000 V 10 A 1.20 ? ? ? ? Power MOSFETs ? IXFT12 N100 1000 V 12 A 1.05 ? ? ? ? N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ? trr ? ? 250 ns ? ? Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-268 Case Style VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G (TAB) VGS

 5.5. ixfh150n20t ixft150n20t.pdf Size:180K _ixys

IXFT16N80P
IXFT16N80P

Advance Technical Information TrenchTM HiperFETTM VDSS = 200V IXFT150N20T Power MOSFETs ID25 = 150A IXFH150N20T ≤ Ω RDS(on) ≤ Ω ≤ 15mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 200 V TO-247 (IX

5.6. ixfh120n25t ixft120n25t.pdf Size:180K _ixys

IXFT16N80P
IXFT16N80P

Preliminary Technical Information TrenchTM HiperFETTM VDSS = 250V IXFT120N25T Power MOSFETs ID25 = 120A IXFH120N25T ≤ Ω RDS(on) ≤ Ω ≤ 23mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 250 V TO-247

5.7. ixfh13n80q ixft13n80q.pdf Size:50K _ixys

IXFT16N80P
IXFT16N80P

IXFH 13N80Q VDSS = 800 V HiPerFETTM IXFT 13N80Q ID25 = 13 A Power MOSFETs RDS(on) = 0.70 W Q Class N-Channel Enhancement Mode trr £ 250 ns Avalanche Rated High dv/dt, Low Qg Preliminary data sheet TO-268 (D3) (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V G VGS Continuous ±20 V (TAB) S VGSM

5.8. ixfh120n15p ixft120n15p.pdf Size:177K _ixys

IXFT16N80P
IXFT16N80P

IXFH 120N15P VDSS = 150 V PolarHTTM HiPerFET IXFT 120N15P ID25 = 120 A Power MOSFET ? ? RDS(on) ? 16 m? ? ? ? ? ? ? ? trr ? 200 ns ? ? N-Channel Enhancement Mode ? Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 150 V VDSS Continuous 20 V D (TAB) VGSM Transi

5.9. ixfh12n90q ixft12n90q.pdf Size:53K _ixys

IXFT16N80P
IXFT16N80P

IXFH 12N90Q VDSS = 900 V HiPerFETTM IXFT 12N90Q ID25 = 12 A Power MOSFETs RDS(on) = 0.9 W Q Class N-Channel Enhancement Mode trr £ 200 ns Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC

5.10. ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf Size:116K _ixys

IXFT16N80P
IXFT16N80P

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W Power MOSFETs IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W trr ? 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet TO-247 AD Symbol Test Conditions Maximum Ratings (IXFH) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 MW 1000 V (TAB) VGS Continuous 20 V VGS

5.11. ixft17n80q.pdf Size:559K _ixys

IXFT16N80P
IXFT16N80P

IXFH 17N80Q VDSS = 800 V HiPerFETTM IXFT 17N80Q ID25 = 17 A Power MOSFETs Ω RDS(on) = 0.60 Ω Ω Ω Ω Q-Class ≤ ≤ trr ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet TO-268 (D3) (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 M

5.12. ixft12n100q ixfh12n100q ixft10n100q ixfh10n100q.pdf Size:144K _ixys

IXFT16N80P
IXFT16N80P

VDSS ID25 RDS(on) HiPerFETTM Ω IXFH/IXFT12N100Q 1000 V 12 A 1.05 Ω Ω Ω Ω Power MOSFETs Ω IXFH/IXFT10N100Q 1000 V 10 A 1.20 Ω Ω Ω Ω Q Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS

5.13. ixfh15n80q ixft15n80q.pdf Size:111K _ixys

IXFT16N80P
IXFT16N80P

IXFH 15N80Q VDSS = 800 V HiPerFETTM IXFT 15N80Q ID25 = 15 A Power MOSFETs RDS(on) = 0.60 W Q-Class trr ? 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 MW 800 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25C15 A IDM TC = 25C,

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