IXFT26N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFT26N50 Datasheet (PDF)

..1. Size:158K ixys
ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETs IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to

0.1. Size:145K ixys
ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf pdf_icon

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1

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ixfh26n60p ixft26n60p ixfv26n60p.pdf pdf_icon

IXFH26N60P VDSS = 600 V PolarHVTM IXFT26N60P ID25 = 26 A Power MOSFET IXFV26N60P RDS(on) 270 m N-Channel Enhancement Mode IXFV26N60PS trr 200 ns Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Contin

7.2. Size:107K ixys
ixfh26n60q ixft26n60q.pdf pdf_icon

IXFH 26N60Q VDSS = 600 V HiPerFETTM IXFT 26N60Q ID25 = 26 A Power MOSFETs RDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V (TAB) VGS Continuous 20 V

Otros transistores... IXFT20N80P , IXFT21N50 , IXFT21N50F , IXFT21N50Q , IXFT24N50 , IXFT24N50Q , IXFT24N80P , IXFT24N90P , IRF530 , IXFT26N60P , IXFT28N50F , IXFT30N40Q , IXFT30N50P , IXFT30N50Q3 , IXFT30N60P , IXFT320N10T2 , IXFT340N075T2 .