IXFT36N50P Todos los transistores

 

IXFT36N50P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFT36N50P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 540 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 36 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 93 nC

Tiempo de elevación (tr): 200 nS

Resistencia drenaje-fuente RDS(on): 0.17 Ohm

Empaquetado / Estuche: TO268

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IXFT36N50P Datasheet (PDF)

1.1. ixfh36n50p ixft36n50p ixfv36n50p.pdf Size:338K _ixys

IXFT36N50P
IXFT36N50P

IXFH 36N50P VDSS = 500 V PolarHVTM HiPerFET IXFT 36N50P ID25 = 36 A Power MOSFET IXFV 36N50P RDS(on) ? 170 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode IXFV 36N50PS trr ? 200 ms ? ? ? ? Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 500 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 500 V D (TAB) VGS Continuous

3.1. ixfh36n60p ixft36n60p ixfk36n60p.pdf Size:268K _ixys

IXFT36N50P
IXFT36N50P

IXFH 36N60P VDSS = 600 V PolarHVTM HiPerFET IXFK 36N60P ID25 = 36 A Power MOSFET ? ? IXFT 36N60P RDS(on) ? 190 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continuous 30 V G D VGSM Trans

 5.1. ixft30n50q.pdf Size:109K _ixys

IXFT36N50P
IXFT36N50P

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs Ω IXFH/IXFT 30N50Q 500 V 30 A 0.16 Ω Ω Ω Ω Ω IXFH/IXFT 32N50Q 500 V 32 A 0.15 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS =

5.2. ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf Size:110K _ixys

IXFT36N50P
IXFT36N50P

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr ? 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 MW 500 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC = 25C 30N

 5.3. ixfh320n10t2 ixft320n10t2.pdf Size:186K _ixys

IXFT36N50P
IXFT36N50P

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 100V IXFH320N10T2 ID25 = 320A Power MOSFET IXFT320N10T2 ? ? RDS(on) ? ? ? 3.5m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M? 100 V TO-268 (IXFT) VGSS Continuou

5.4. ixfh340n075t2 ixft340n075t2.pdf Size:182K _ixys

IXFT36N50P
IXFT36N50P

Advance Technical Information TrenchT2TM HiPerFETTM VDSS = 75V IXFH340N075T2 ID25 = 340A Power MOSFET IXFT340N075T2 ? ? RDS(on) ? ? ? 3.2m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings D D (TAB) S VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C, RGS = 1M? 75 V VGSM Transient 20 V TO-268 (

 5.5. ixft30n60q.pdf Size:583K _ixys

IXFT36N50P
IXFT36N50P

IXFH 30N60Q VDSS = 600 V HiPerFETTM IXFT 30N60Q ID25 = 30 A Power MOSFETs Ω RDS(on) = 0.23 Ω Ω Ω Ω Q-Class ≤ ≤ trr ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V (TAB

5.6. ixfh30n50p ixft30n50p ixfv30n50p.pdf Size:320K _ixys

IXFT36N50P
IXFT36N50P

VDSS = 500 V IXFH 30N50P PolarHVTM HiPerFET ID25 = 30 A IXFT 30N50P Power MOSFET ? ? RDS(on) ? 200 m? ? ? ? ? ? ? IXFV 30N50P N-Channel Enhancement Mode ? trr ? 200 ns ? ? ? IXFV 30N50PS Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Conti

5.7. ixfh30n60p ixfv30n60p ixft30n60p.pdf Size:324K _ixys

IXFT36N50P
IXFT36N50P

IXFH 30N60P VDSS = 600 V PolarHVTM HiPerFET IXFT 30N60P ID25 = 30 A Power MOSFET ? ? ? ? IXFV 30N60P RDS(on) ? 240 m? ? ? ? ? N-Channel Enhancement Mode ? ? IXFV 30N60PS trr ? 200 ns ? ? Fast Recovery Diode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V G VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V DS D (TAB) VGSS Conti

5.8. ixfh32n50q ixft32n50q.pdf Size:567K _ixys

IXFT36N50P
IXFT36N50P

IXFH 32N50Q VDSS ID25 RDS(on) HiPerFETTM IXFT 32N50Q Power MOSFETs ? 500 V 32 A 0.16 ? ? ? ? ? 500 V 32 A 0.16 ? ? ? ? Q-Class ? trr ? ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V VGSM Transie

5.9. ixfh30n60x ixfq30n60x ixft30n60x.pdf Size:185K _ixys

IXFT36N50P
IXFT36N50P

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT30N60X Power MOSFET ID25 = 30A IXFQ30N60X   RDS(on)    155m     IXFH30N60X TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V G VDGR TJ = 25C to 150

Otros transistores... IXFT26N60P , IXFT28N50F , IXFT30N40Q , IXFT30N50P , IXFT30N50Q3 , IXFT30N60P , IXFT320N10T2 , IXFT340N075T2 , 2SK3568 , IXFT36N60P , IXFT400N075T2 , IXFT42N50P2 , IXFT44N50P , IXFT50N30Q3 , IXFT50N60P3 , IXFT52N50P2 , IXFT58N20 .

 

 
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