IXFT7N90Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFT7N90Q Datasheet (PDF)

..1. Size:112K ixys
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www.DataSheet.co.krAdvanced Technical InformationIXFH 7N90Q VDSS = 900 VHiPerFETTMIXFT 7N90Q ID25 = 7 APower MOSFETsRDS(on) = 1.5 WQ-ClassN-Channel Enhancement Modetrr 250 nsAvalanche Rated, Low Qg, High dv/dtTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 900 VVDGR TJ = 25C to 150C; RGS = 1 MW 900 VVGS Continuous 20 VVGSM

9.1. Size:151K ixys
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Advanced Technical InformationIXFH 75N10Q VDSS = 100 VHiPerFETTMIXFT 75N10Q ID25 = 75 APower MOSFETs RDS(on) = 20 mWQ-Classt 200nsrr N-Channel Enhancement ModeAvalanche Rated, High dv/dtLow Gate Charge and CapacitancesSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 100 VVDGR TJ = 25C to 150C; RGS = 1 M 100 VVGS Continuous

9.2. Size:52K ixys
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Advanced Technical InformationIXFH 70N15 VDSS = 150 VHiPerFETTMIXFT 70N15 ID25 = 70 APower MOSFETs RDS(on) = 28 mWtrr 250nsN-Channel Enhancement ModeAvalanche Rated, High dv/dt, Low trrSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 MW 150 VVGS Continuous 20 VVGSM Transient 30 V(TAB)ID2

9.3. Size:131K ixys
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Advance Technical InformationHiperFETTM VDSS = 300VIXFT70N30Q3Power MOSFETs ID25 = 70AIXFH70N30Q3 Q3-Class RDS(on) 54m N-Channel Enhancement ModeAvalanche RatedTO-268 (IXFT)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VTO-247 (IXFH)VDGR TJ = 25C to 150C, RGS = 1M 300

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