IXFV110N25TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFV110N25TS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 694 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
CARACTERÍSTICAS ELÉCTRICAS
Qgⓘ - Carga de la puerta: 157 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Paquete / Cubierta: PLUS220SMD
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IXFV110N25TS Datasheet (PDF)
ixfh110n10p ixfv110n10p.pdf
IXFH 110N10P VDSS = 100 VPolarHTTM HiPerFETIXFV 110N10P ID25 = 110 APower MOSFET IXFV 110N10PS RDS(on) 15 m N-Channel Enhancement Modetrr 150 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100
ixfh12n90p ixfv12n90p-s.pdf
Preliminary Technical InformationIXFH12N90P VDSS = 900VPolarTM Power MOSFETIXFV12N90P ID25 = 12AHiPerFETTM RDS(on) 900m IXFV12N90PS trr 300nsN-Channel Enhancement ModeAvalanche RatedPLUS220 (IXFV)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsDSVDSS TJ = 25C to 150C 900 VD (TAB)VDGR TJ
ixfh18n60p ixfv18n60p.pdf
IXFH 18N60P VDSS = 600 VPolarHVTM HiPerFETIXFV 18N60P ID25 = 18 APower MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Co
ixfh12n120p ixfv12n120p ixfv12n120ps.pdf
IXFH12N120P VDSS = 1200VPolarTM Power MOSFETIXFV12N120P ID25 = 12AHiPerFETTM RDS(on) 1.35 IXFV12N120PS N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic Diode PLUS220 (IXFV)GDSSymbol Test Conditions Maximum RatingsD (TAB)VDSS TJ = 25C to 150C 1200 VPLUS220SMD (IXFV_S)VDGR TJ = 25C to 1
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918