IXFV12N80P Todos los transistores

 

IXFV12N80P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXFV12N80P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 360 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 250 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: PLUS220

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IXFV12N80P Datasheet (PDF)

 7.1. Size:179K  ixys
ixfh12n90p ixfv12n90p-s.pdf pdf_icon

IXFV12N80P

Preliminary Technical Information IXFH12N90P VDSS = 900V PolarTM Power MOSFET IXFV12N90P ID25 = 12A HiPerFETTM RDS(on) 900m IXFV12N90PS trr 300ns N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25 C to 150 C 900 V D (TAB) VDGR TJ

 7.2. Size:176K  ixys
ixfh12n120p ixfv12n120p ixfv12n120ps.pdf pdf_icon

IXFV12N80P

IXFH12N120P VDSS = 1200V PolarTM Power MOSFET IXFV12N120P ID25 = 12A HiPerFETTM RDS(on) 1.35 IXFV12N120PS N-Channel Enhancement Mode trr 300ns Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) G DS Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25 C to 150 C 1200 V PLUS220SMD (IXFV_S) VDGR TJ = 25 C to 1

 9.1. Size:309K  ixys
ixfh110n10p ixfv110n10p.pdf pdf_icon

IXFV12N80P

IXFH 110N10P VDSS = 100 V PolarHTTM HiPerFET IXFV 110N10P ID25 = 110 A Power MOSFET IXFV 110N10PS RDS(on) 15 m N-Channel Enhancement Mode trr 150 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100

 9.2. Size:172K  ixys
ixfh18n60p ixfv18n60p.pdf pdf_icon

IXFV12N80P

IXFH 18N60P VDSS = 600 V PolarHVTM HiPerFET IXFV 18N60P ID25 = 18 A Power MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Co

Otros transistores... IXFV110N10P , IXFV110N10PS , IXFV110N25T , IXFV110N25TS , IXFV12N100P , IXFV12N100PS , IXFV12N120P , IXFV12N120PS , 60N06 , IXFV12N80PS , IXFV12N90P , IXFV12N90PS , IXFV14N80P , IXFV14N80PS , IXFV15N100P , IXFV15N100PS , IXFV16N80P .

 

 
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